The Electrical and Optical Properties of Fe&amp;ndash;O&amp;ndash;N Thin Films Deposited by RF Magnetron Sputtering

Ogawa, Yukiko; Ando, Daisuke; Sutou, Yuji; Koike, Junichi

doi:10.2320/matertrans.m2013170

Cited by 5 publications

(4 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2327) Recently, the present authors have reported on the electrical and optical properties of Fe-O-N films deposited by reactive RF magnetron sputtering under O 2 gas flow rate of 0.10.25 sccm and N 2 gas flow rate of 15 sccm. 28) It was found that the resistivity of the as-deposited films increased from 10 2 to over 10 6 ³ cm with increasing the oxygen gas flow rate. Moreover, the resistivity was found to decrease by more than 3 orders after annealing at 673 K. Such changes in the resistivity of the films may be due to the change of crystal structure of the films, but was not clear.…”

Section: Introductionmentioning

confidence: 99%

Effects of O2 and N2 Flow Rate on the Electrical Properties of Fe-O-N Thin Films

et al. 2014

Self Cite

View full text Add to dashboard Cite

We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O 2 and N 2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O 2 and N 2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O 2 and N 2 gas flow rate. The resistivity increase with the O 2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe 3 O 4 , to a mixed phase of FeO+¡-Fe 2 O 3 , and to a single phase of ¡-Fe 2 O 3 , as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N 2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Keywords: iron oxide, nitrogen-doped, electrical resistivity, effects of oxygen and nitrogen flow rate

show abstract

Section: Introductionmentioning

confidence: 99%

Effects of O2 and N2 Flow Rate on the Electrical Properties of Fe-O-N Thin Films

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…A close look into Figure 8 shows that the reduction of oxygen partial pressure in the process leads to the decrease in the band gap. The energy gap of the magnetite film reported in the literature is 0.1 eV [11] or 0.3 eV [43], whereas it is higher for maghemite thin film. Optical properties of maghemite thin film were not studied in detail in the literature but the expected value of its direct optical band gap is larger than 2.46 eV [44].…”

Section: Optical Propertiesmentioning

confidence: 82%

“…The interest in the study of 2 of 15 iron oxynitride films (Fe-O-N) is to elaborate a material that exhibits intermediate properties between those of iron oxide and iron nitride films. The Fe-O-N thin films have been studied for potential application to photoelectrochemical water splitting to generate hydrogen, solar application [11], magnetic [12], optical, electronic, etc. properties [13,14].…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Flow Rate on the Properties of FeOXNY Films Obtained by Magnetron Sputtering at High Nitrogen Pressure

et al. 2022

View full text Add to dashboard Cite

Fe-O-N films were successfully deposited by magnetron sputtering of an iron target in Ar-N2-O2 reactive mixtures at high nitrogen partial pressure 1.11 Pa (Q(N2) = 8 sccm) using a constant flow rate of argon and an oxygen flow rate Q(O2) varying from 0 to 1.6 sccm. The chemical composition and the structural and microstructural nature of these films were characterized using Rutherford Backscattering Spectrometry, X-ray diffraction, and Conversion Electron Mössbauer Spectrometry, respectively. The results showed that the films deposited without oxygen are composed of a single phase of γ″-FeN, whereas the other films do not consist of pure oxides but oxidelike oxynitrides. With higher oxygen content, the films are well-crystallized in the α-Fe2O3 structure. At intermediate oxygen flow rate, the films are rather poorly crystallized and can be described as a mixture of oxide γ-Fe2O3/Fe3O4. In addition, the electrical behavior of the films evolved from a metallic one to a semiconductor one, which is in total agreement with other investigations. Comparatively to a previous study carried out at low nitrogen partial pressure (0.25 Pa), this behavior of films prepared at higher nitrogen partial pressure (1.11 Pa) could be caused by a catalytic effect of nitrogen on the crystallization of the hematite structure.

show abstract

“…However, neither of these forms of iron oxide are known to have the combination of low resistivity and high mobility values measured here. Fe 3 O 4 is reported to have resistivity of the order of 10 3 Ω-cm2021 while it is of the order of 10 3 Ω-cm for γ -Fe 2 O 3 22. A 41 nm thickness epitaxial magnetite film has been reported to have an effective hall mobility of about 0.07 cm 2 /V-s with a maximum anomalous hall mobility of 35 cm 2 /V-s23.…”

Section: Discussionmentioning

confidence: 99%

Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

Taz

Sakthivel

Yamoah

et al. 2016

Sci Rep

View full text Add to dashboard Cite

We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10−4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.

show abstract

The Electrical and Optical Properties of Fe–O–N Thin Films Deposited by RF Magnetron Sputtering

Cited by 5 publications

References 26 publications

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

Influence of Oxygen Flow Rate on the Properties of FeOXNY Films Obtained by Magnetron Sputtering at High Nitrogen Pressure

Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

Contact Info

Product

Resources

About