The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts

Aydín, M.E.; Türüt, A.

doi:10.1016/j.mee.2007.02.010

Cited by 121 publications

(32 citation statements)

References 51 publications

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“…11, the values of N ss rise exponentially with bias (or E ss ) without any peak and minimum. On the other hand, Aydın et al [40] found that density distribution profile of N ss has U shape behavior. Similar results have been also reported in literature [45,46].…”

Section: à3mentioning

confidence: 98%

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On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Demirezen

Altındal

Özçelik

et al. 2011

Microelectronics Reliability

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a b s t r a c tIn order to explain the experimental effect of interface states (N ss ) and series resistance (R s ) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/x-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (À5 V)-(+5 V), respectively. The voltage dependent R s profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (r ac ) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m ) and conductance (G m /x) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of N ss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/x-V characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures.

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Section: à3mentioning

confidence: 98%

“…As explained in Refs. [16,17,[38][39][40][41], the conductance method yields more accurate and reliable results. Fig.…”

Section: E-08mentioning

confidence: 99%

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Demirezen

Altındal

Özçelik

et al. 2011

Microelectronics Reliability

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“…41) The region-IV showed the power-law dependency illustrated by a decrease in the slope to a value of m = 2.1, indicating the carrier transport in Au/CuPc/n-GaN Schottky contact approached the trap-filled limit at high injection level whose dependency is the same as in the trapfree space-charge-limited current. 18,38,42,43) Namely, in higher voltage region, the most of traps were occupied by injected carriers, and then the accumulation of space charge near the electrode resulted in the creation of a field impeding further injection. Thus, Au/CuPc/n-GaN Schottky contact would behave as if there are no traps in it, and the current would vary as the square of the voltage.…”

Section: )mentioning

confidence: 99%

Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

et al. 2014

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We investigated the electrical characteristics of Au/n-GaN Schottky rectifier incorporating a copper pthalocyanine (CuPc) interlayer using currentvoltage (IV), capacitancevoltage (CV) and conductancevoltage (GV) measurements. The barrier height of the Au/CuPc/n-GaN Schottky contact was higher than that of the Au/n-GaN Schottky diode, indicating that the CuPc interlayer influenced the space charge region of the n-GaN layer. The series resistance of Au/CuPc/n-GaN Schottky contact extracted from the CV and GV methods was dependent on the frequency. In addition, the series resistance obtained from CV and GV characteristics was comparable to that from Cheung's method at sufficiently high frequencies and in strong accumulation regions. The forward log Ilog V plot of Au/CuPc/n-GaN Schottky contact exhibited four distinct regions having different slopes, indicating different conduction mechanisms in each region. In particular, at higher forward bias, the trap-filled space-charge-limited current was the dominant conduction mechanism of Au/CuPc/n-GaN Schottky contact, implying that the most of traps were occupied by injected carriers at high injection level.

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“…1. The structure of azo dyes has attracted considerable attentions recently due to their wide applicability in the light-induced photo isomerization process, and their potential usage for the reversible optical data storage [29,[32][33][34].…”

Section: Introductionmentioning

confidence: 99%

“…The rectifying characteristics of the devices reported here suggest many unique device applications such as MIS, photovoltaic cell and chemical sensors, etc. [19,[26][27][28]34]. We calculated the BHs and ideality factor of each OI devices by using thermionic emission (TE) mechanism.…”

Section: Introductionmentioning

confidence: 99%

Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

Güllü

Barış

Bı̇ber

et al. 2008

Applied Surface Science

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The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts

Cited by 121 publications

References 51 publications

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

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