The Electrical Characteristics of Thin Gadolinium Oxide Films on Silicon Substrate by DC Reactive RF-sputtering

Electrical and Physical Characteristics of the High-K Gd₂O₃ (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon

“…The sample with the highest RTA temperature (900 0 C) clearly exhibits an extra stronger peaks characteristic of (400)-oriented Gd 2 O 3 in comparison to the as-deposited sample. This means the high-k Gd 2 O 3 dielectrics with post RTA annealing present rather well-crystallized and strong Gd 2 O 3 .structures [2]. Figure 3 demonstrates Gd 4d, O 1s and Si 2p XPS spectra for the Gd 2 O 3 /Poly-Si interface before and after post RTA annealing.…”