In this letter, we reported a high-k gadolinium oxide (Gd2O3) gate dielectric formed by reactive rf sputtering. It is found that the Gd2O3 gate dielectric film exhibits excellent electrical properties such as low leakage current density, high breakdown voltage, and almost no hysteresis and frequency dispersion in C-V curves comparable to that of HfO2 film. This indicates that postprocessing treatments can reduce a large amount of interface trap and can passivate a large amount of trapped charge at defect sites.

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