The electrical, optical and photoconducting properties of Fe2−xCrxO3 (0 ⩽ x ⩽ 0.47)

Merchant, Paul; Collins, R.; Kershaw, R.; Dwight, K.; Wold, A.

doi:10.1016/0022-4596(79)90173-7

Cited by 112 publications

(72 citation statements)

References 12 publications

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“…6) is used to estimate E a and E g for the film deposited at f N 2 ¼ 5 sccm, which are 0.043 and 0.086 eV, respectively. E a for electron transport in a bulk single crystal of magnetite was reported to be approximately 0.06 eV 39) and the bandgap of magnetite is 0.1 eV, 10) which are close to the obtained values from Fig. 6.…”

Section: Resultssupporting

confidence: 78%

“…8,9) The bandgaps of these oxides also differ significantly. 10,11) Therefore, the electrical properties of Fe-O films can be significantly changed with the oxygen concentration.…”

Section: Introductionmentioning

confidence: 99%

“…36) Hematite has a resistivity of over 10 5 ³ cm, 7) while magnetite has a lower resistivity of approximately 10 ¹3 ³ cm. 8,9) The bandgaps of these oxides also differ significantly.…”

Section: Introductionmentioning

confidence: 99%

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Effects of O2 and N2 Flow Rate on the Electrical Properties of Fe-O-N Thin Films

et al. 2014

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We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O 2 and N 2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O 2 and N 2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O 2 and N 2 gas flow rate. The resistivity increase with the O 2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe 3 O 4 , to a mixed phase of FeO+¡-Fe 2 O 3 , and to a single phase of ¡-Fe 2 O 3 , as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N 2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Keywords: iron oxide, nitrogen-doped, electrical resistivity, effects of oxygen and nitrogen flow rate

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Section: Resultssupporting

confidence: 78%

“…8,9) The bandgaps of these oxides also differ significantly. 10,11) Therefore, the electrical properties of Fe-O films can be significantly changed with the oxygen concentration.…”

Section: Introductionmentioning

confidence: 99%

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Effects of O2 and N2 Flow Rate on the Electrical Properties of Fe-O-N Thin Films

et al. 2014

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“…Merchant et al also reported that the inclusion of small amount of magnetite can increase conductivity. 23) Indeed, the resistivity of bulk hematite is higher than 10 5 ³cm, while that of magnetite is about 10 ¹3 ³cm. The bandgap is 2.1 eV for hematite and 0.1 eV for magnetite, respectively.…”

Section: Discussionmentioning

confidence: 99%

The Electrical and Optical Properties of Fe–O–N Thin Films Deposited by RF Magnetron Sputtering

et al. 2013

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The electrical and optical properties of FeON films were investigated in order to find their possibilities for solar cell application. FeON thin films were deposited on glass substrates by RF magnetron sputtering using an ArN 2 O 2 reactive gas. Under optimum flow rates of nitrogen and oxygen, the FeON films showed equivalent electrical properties to amorphous Si that has been conventionally used for thin film solar cells. Bandgap narrowing was also observed from 2.0 to 1.9 eV. The observed results were considered to be due to the formation of hematitemagnetite mixed phase, and the introduction of oxygen vacancies and/or nitrogen interstitials.

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“…It is well accepted that the band edge of ␣-Fe 2 O 3 is located in the range of ͑2.00-2.20͒ eV. [34][35][36] The transitions in this energy region include the d-d transitions, pair excitation, and less charge transfer, and the former two transitions mainly come from the narrow d bands, so the optical properties of hematite band edge cannot be accounted for intrinsic semiconductor. Han et al 37 recently reported room temperature PL of ␣-Fe 2 O 3 nanowires with a band gap of 2.14 eV, while PL spectra from capped and naked ␣-Fe 2 O 3 nanocrystals indicate band gaps in the 1.93-2.12 eV range.…”

Section: -5mentioning

confidence: 99%

Shape-controlled synthesis and cathodoluminescence properties of elongated α-Fe2O3 nanostructures

Chioncel¹,

Dı́az-Guerra²,

Piqueras³

2008

Journal of Applied Physics

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α -Fe 2 O 3 (hematite) nanostructures with various morphologies have been grown by thermal oxidation of compacted iron powder at temperatures between 700 and 900 °C. Different thermal treatments have been found to induce the growth of single-crystalline nanowires, nanobelts, nanoplates and featherlike structures, free and caped nanopillars, and pyramidal microcrystals or cactuslike microstructures. The experimental conditions leading to the different morphologies have been systematically investigated, as well as the possible growth mechanisms. The obtained nanostructures have been characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy, x-ray diffraction, and cathodoluminescence (CL) spectroscopy in the SEM. The formation of the nanostructures induces changes in the intensity and spectral distribution of the CL emission, as compared with the bulk material. Ligand to metal charge transfer transitions as well as Fe3+ ligand field transitions are thought to be involved in the observed luminescence. The evolution of the panchromatic CL intensity in the visible range as a function of temperature shows some anomalies that may be induced by magnetic ordering effects.

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The electrical, optical and photoconducting properties of Fe2−xCrxO3 (0 ⩽ x ⩽ 0.47)

Cited by 112 publications

References 12 publications

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

The Electrical and Optical Properties of Fe–O–N Thin Films Deposited by RF Magnetron Sputtering

Shape-controlled synthesis and cathodoluminescence properties of elongated α-Fe2O3 nanostructures

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The electrical, optical and photoconducting properties of Fe2−xCrxO3 (0 ⩽ x ⩽ 0.47)

Cited by 112 publications

References 12 publications

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

The Electrical and Optical Properties of Fe&ndash;O&ndash;N Thin Films Deposited by RF Magnetron Sputtering

Shape-controlled synthesis and cathodoluminescence properties of elongated α-Fe2O3 nanostructures

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The Electrical and Optical Properties of Fe–O–N Thin Films Deposited by RF Magnetron Sputtering