The electrical properties of sulfur-implanted cubic boron nitride thin films

Deng, Jinxiang; Yue, Qin; Kong, Le; Yang, Xueliang; Li, Ting; Zhao, W. P.; Yang, Ping

doi:10.1088/1674-1056/21/4/047202

Cited by 8 publications

(4 citation statements)

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“…11,13,16 Although an activation energy of 0.18 eV was obtained by ion implantation of S followed by annealing at 400C, the cubic phase content was found to be less than 30%. 17 This paper addresses two critical challenges related to c-BN growth and doping with both n-and p-type dopants beyond the thermodynamic solid solubility limits. The first challenge has been addressed by the laser melting of nanocrystalline hexagonal boron nitride (h-BN) in a super undercooled state and rapid quenching subsequently.…”

Section: Introductionmentioning

confidence: 99%

“…The doping efficiency of n-type dopants in c-BN is another critical issue to be resolved for practical electronic device applications. Si is a very commonly used n-type dopant for c-BN, but the higher activation energies such as 1.17 eV for in situ Si cosputtered c-BN, 0.42 eV for high-temperature thermal annealed c-BN, and 0.4 eV for Si implanted c-BN even in heavily doped samples (3.3 atom %) make it very inefficient for practical applications. ,, Although an activation energy of 0.18 eV was obtained by ion implantation of S followed by annealing at 400C, the cubic phase content was found to be less than 30% …”

Section: Introductionmentioning

confidence: 99%

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Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping

Haque

Narayan

2021

ACS Appl. Electron. Mater.

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The recent discovery of direct conversion of hexagonal boron nitride (h-BN) into quenched BN (Q-BN) and single-crystal cubic BN (c-BN) by pulsed laser annealing (PLA) have been implemented to fabricate carbon-doped c-BN with dopant concentration ranging from 2 × 10 19 to 7 × 10 21 cm −3 . Micro Raman analysis shows a total conversion of h-BN into phase-pure c-BN, whereas the X-ray diffraction (XRD) confirms the presence of the cubic structure with (111) epitaxy on c-sapphire. Hall measurements demonstrate the n-type electrical property, and the temperature-dependent resistivity measurements confirm the semiconductor-like profile of the doped c-BN. Consistent changes in resistivity, Hall mobility, and other electrical properties were investigated with the variance in dopant concentration level. We have observed a shift in the conduction mechanism with temperature from the resistivity vs temperature analyses. At the hightemperature regime (130−330 K), the activation energy lies in between 0.012 and 0.074 eV, whereas at the low-temperature regime (20−130 K), the activation energy was obtained to be in between 0.0024 and 0.0083 eV. The lower values of activation energies, showing a complete ionization of the impurity atoms even at room temperature, are surmised to result from dopant-profile broadening. The enhanced electrical activation and superior quality c-BN films open exciting avenues for next-generation device applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping

Haque

Narayan

2021

ACS Appl. Electron. Mater.

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“…As an analog of diamond, cubic boron nitride (c-BN) exhibits many similar outstanding properties such as extreme hardness, wide band gap, negative electron affinity, high thermal conductivity, etc. [1][2][3][4][5][6][7][8][9][10][11][12] Furthermore, c-BN also holds numerous physical properties and chemical inertness, making it more superior to diamond for future technical applications. However, the nucleation and growth of c-BN film require the high-energy ion bombardment on the growing surface no matter whether physical vapor deposition (PVD) or chemical vapor deposition (CVD) method is used, resulting in accumulation of the compressive stress.…”

Section: Introductionmentioning

confidence: 99%

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

et al. 2016

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The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-µm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H 2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed.

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“…[1][2][3][4][5] One of the promising application fields, which has long been expected, is to use the c-BN film as a protective coating for cutting tools, because it possesses outstanding mechanical properties such as high hardness, wear resistance, and chemical inertness to ferrous metals at high temperatures. [2][3][4][5][6] The films are always required to be thick enough in order to play a protective role. One of the great hurdles, which restricts its practical usage, is the high compressive stress and the poor adhesion to most of the substrates.…”

Section: Introductionmentioning

confidence: 99%