The electrical switching and thermal behavior of bulk Ge15Te85−xSnx and Ge17Te83−xSnx glasses

Das, Chandasree; Rao, G. Mohan; Asokan, S.

doi:10.1016/j.jnoncrysol.2011.09.021

Cited by 8 publications

(2 citation statements)

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“…The transition pressure P T is seen to decrease with increasing Sn concentration in the series of samples studied. Electrical switching as well as thermal stability [27] and other studies on this series of samples indicate that Sn (tin) atoms do not interact with the host matrix but form a phase separated network of their own and remain as inclusions in the parent matrix. Consequently, there is no enhancement of network connectivity and rigidity and this is reected in the decrease in switching voltages with the addition of tin rather than an increase.…”

Section: Discussionmentioning

confidence: 64%

“…the switching is reversible. The GeTeSn samples undergo memory type of switching [27] which indicates that amorphous to crystalline phase transition takes place easily in these samples. However, the semiconductor to near metallic transition observed under the application of pressure seems to be reversible with its origins in the reduction of the energy bandgap rather than a structural phase change.…”

Section: Discussionmentioning

confidence: 99%

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Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study

et al. 2015

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The variation of normalized electrical resistivity in the system of glasses Ge15Te85−xSnx with (1 ≤ x ≤ 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.52.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.

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Section: Discussionmentioning

confidence: 64%

Section: Discussionmentioning

confidence: 99%