The Electrolyte‐Silicon Interface; Anodic Dissolution and Carrier Concentration Profiling

Sharpe, Catherine; Lilley, P.

doi:10.1149/1.2130036

Cited by 16 publications

(5 citation statements)

References 2 publications

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“…The measurements at p-type electrodes were irreproducible and not stable in time. Similar problems were observed for p-Si by others (15,16). With n-type material the results were stable and reproducible.…”

Section: We S T U D I E D T H E Influence Of T H E H F a N D Cro3 Con...supporting

confidence: 86%

Silicon Etching in CrO3 ‐ HF Solutions: I . High Ratios

Meerakker¹,

Vegchel²

1989

J. Electrochem. Soc.

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The dissolution of silicon in aqueous CrO3‐HF solutions was investigated by etching and electrochemical measurements. At high false[HFfalse]/false[CrO3false] ratios, etching occurs via an electroless process in which reduction of Cr (VI) and oxidation of Si take place simultaneously. A model is presented for the anodic dissolution of silicon in HF solutions. The electrochemical results have been used to determine the relevant rate constants for the different reaction steps. Combining cathodic and anodic processes resulted in a rate law for the etching kinetics. Good agreement was obtained between calculated and measured etch rates.

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Section: We S T U D I E D T H E Influence Of T H E H F a N D Cro3 Con...supporting

confidence: 86%

Silicon Etching in CrO3 ‐ HF Solutions: I . High Ratios

Meerakker¹,

Vegchel²

1989

J. Electrochem. Soc.

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“…For a long time, processes based on electrochemical treatment of surfaces are used in technology aimed at production of semiconductor devices, for example, to form passivating coatings by using the method of anodic oxidation [4]. Semiconductor electrodes are also used to determine a number of parameters inherent to the electrode material, namely: density and nature of surface defects, profile of impurity distribution, rate of surface recombination and so on [5,6]. A separate promising direction is to electrochemically modify the surface, which enables to create ordered 3D nano-dimensional structures on it.…”

Section: Introductionmentioning

confidence: 99%

Features of electrochemical processes at the boundary p-GaAs–HF water solution

Pashchenko¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

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Investigated in this work have been polarization curves typical for the interface p-GaAs-HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytical expressions obtained with account of the general equation for electrochemical kinetics. This equation was considered for partial cases of electrode potential redistribution between the Helmholtz layers and space charge region (SCR) in semiconductor. It has been found that the shape of polarization curves corresponds to the state when exchange reactions at the above boundary for the used HF concentrations take place mainly via the valence band with participation of holes, while the electrode potential redistributes between semiconductor SCR and the Helmholtz layer. Determined also have been the ranges of current density where transfer of current carriers takes place through the boundary p-GaAs-HF water solution (electrochemical stage), exchange currents for cathode and anode biases, coefficient of charge carrier transfer under the cathode bias.

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“…semiconductor surface. This method was firstly used for the measurement of carrier concentration in 111-V semiconductors [l, 21. In the last few years the application of the ECV profiling has been extended to silicon [3,4]. In There are no publications for measurements on high-resistivity silicon using this method.…”

Section: Introductionmentioning

confidence: 99%

Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements

Sieber

Wulf²

1991

Phys. Stat. Sol. (a)

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The electrochemical capacitance‐voltage (C–V) measurement is widely used for the measurement of the carrier concentration in semiconductors with a relatively high doping level where the depletion layer width is very small. In some cases this method can also be used for the investigation of the carrier concentration distribution in semiconductors with a low doping level. This paper deals with the problems due to the limitations of the measurement devices, of the imperfections of the investigated materials as well as of the measuring principle connected with the depletion approximation used for the determination of doping profile in samples with low doped silicon. These limitations are investigated using implanted and homogeneously doped samples. The measuring profiles are compared with the calculated distribution as well as with the spreading resistance and pulsed C‐V measurements of the MOS structure. Some advantages and disadvantages of this technique are shown.

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The Electrolyte‐Silicon Interface; Anodic Dissolution and Carrier Concentration Profiling

Cited by 16 publications

References 2 publications

Silicon Etching in CrO3 ‐ HF Solutions: I . High Ratios

Silicon Etching in CrO3 ‐ HF Solutions: I . High Ratios

Features of electrochemical processes at the boundary p-GaAs–HF water solution

Some Limitations of the Measurement of Dopant Distribution in Silicon Layers using Electrochemical Capacitance-Voltage Measurements

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