The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB

Abstract

Low‐energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10‐nm‐thick buckminsterfullerene (C60) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.

The Impact of UV Photoelectron Spectroscopy on the Field of Organic Optoelectronics—A Retrospective

“…[ 196 ] An increasing number of studies have been published showing the validity of this approach. [ 149,197,198 ]…”

“…[196] An increasing number of studies have been published showing the validity of this approach. [149,197,198] This technique makes it possible to start with a finished optoelectronic device and measure with UPS the electronic structure starting from the top contact, all the way down to the bottom electrode. This has not been done so far for a complete device, but recently the electronic structure throughout a ZnO/ P3HT:PCBM structure (therefore a device prepared without the top contact) has been published using this top-down approach.…”

Single and dual metal atom catalysts for enhanced singlet oxygen generation and oxygen reduction reaction

“…62 We attribute the increase in the bandgap to a decrease in planarity of the framework due to the presence of the metal atom leading to less delocalization of unpaired electrons. 63,64 We further carried out low energy inverse photoemission spectroscopy (LEIPS) 65,66 experiments to measure the conduction band (CB) levels (relative to the vacuum level) for N-doped, FeN 4 -SAC, CoN 4 -SAC, NiN 4 -SAC, and FeNiN 8 -DAC samples (Fig. S21 †).…”

“…We further carried out low energy inverse photoemission spectroscopy (LEIPS) 65,66 experiments to measure the conduction band (CB) levels (relative to the vacuum level) for N-doped, FeN 4 -SAC, CoN 4 -SAC, NiN 4 -SAC, and FeNiN 8 -DAC samples (Fig. S21†).…”

Recent Progress in the Consistent Interpretation of Complementary Spectroscopic Results Obtained on Molecular Systems

“…[36][37][38][39][40] This technique has since been applied to several molecular thin films. [11,[43][44][45][46][47][48] As an example, Figure 5 shows LEIPS data for pentacene (d = 10 nm) on HOPG and on silicon covered with natural oxide (SiO 2 ). [40] Since the cross sections of inverse photoemission are several orders of magnitude inferior to direct photoemission, [49,50] LEIPS data are typically much noisier.…”