The electronic contribution to the elastic constants in strained layer quantum well superlattices of non-parabolic semiconductors with graded interfaces under magnetic quantization: Simplified theory and suggestion for experimental determination

Chowdhary, S. K.; Singh, L. Joyprakash; Ghatak, K. P.

doi:10.1016/j.physb.2005.04.028

Cited by 24 publications

(2 citation statements)

References 23 publications

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“…The Fermi energy is again determined by the carrier energy spectrum and the electron ARTICLE statistics and therefore, these two features would determine the dependence of the EEM in degenerate n-type semiconductors under the degree of carrier degeneracy. In recent years, various energy wave vector dispersion relations have been proposed [6][7][8][9][10][11][12][13][14][15][16][17] which have created the interest in studying the EEM in such materials under external conditions. The nature of these variations has been investigated in the literature.…”

Section: Introductionmentioning

confidence: 99%

Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

Debbarma¹,

Bhattacharjee²,

Bhattacharyya³

et al. 2012

j adv phys

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In this paper we study the influence of quantizing magnetic field on the effective electron mass (EEM) in nonlinear optical materials on the basis of a newly formulated electron dispersion law by considering all types of anisotropies of the energy band constants within the framework of k.p. formalism. The results for III-V, ternary and quaternary materials form special case of our generalized analysis. We have also studied the EEM in II-VI, bismuth, IV-VI, stressed, Te, GaP, PtSb 2 , Bi 2 Te 3 , Ge, GaSb and II-V semiconductors by formulating the appropriate magneto dispersion law in each case. It has been found that the magneto EEM in nonlinear optical materials depends on the magnetic quantum number due to the combined influence of the crystal field splitting constant and the anisotropic spin-orbit splitting. The same mass in Bi and Ge depends on both the magnetic quantum number and the Fermi-energy due to the presence of band non-parabolicity only and for stressed materials stress makes the mass quantum number dependent. The EEM in Te, GaP, PtSb 2 and II-V semiconductors depend on the magnetic quantum number, which is the characteristic feature of the same material. The EEM is an oscillatory function of inverse quantizing magnetic field due to SdH effect and increases with increasing concentration and exhibits a periodic variation with the direction of the quantizing magnetic field in the appropriate cases. Under certain special conditions all the results for all the materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test.

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Section: Introductionmentioning

confidence: 99%

Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

Debbarma¹,

Bhattacharjee²,

Bhattacharyya³

et al. 2012

j adv phys

Self Cite

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show abstract

“…The Fermi energy is again determined by the carrier energy spectrum and the carrier concentration and, therefore, these two features would determine the dependence of the EMM in degenerate n-type semiconductors under the degree of carrier degeneracy. In recent years, various energy wavevector dispersion relations have been proposed [6][7][8][9][10][11][12][13][14][15][16][17] which have created an interest in studying the EMM in such materials under external conditions. It has, therefore, different values in different materials and varies with electron concentration, with the magnitude of the reciprocal quantizing magnetic field under magnetic quantization, with the quantizing electric field as in inversion layers, with the nanothickness as in quantum wells and quantum well wires and with superlattice period as in the quantum confined superlattices of small gap semiconductors with graded interfaces having various carrier energy spectra.…”

Section: Introductionmentioning

confidence: 99%

A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves

et al. 2007

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We present a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III-V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings under different external conditions. It has been observed that the unperturbed isotropic energy spectrum in the presence of light changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. In the presence of light, the conduction band moves vertically upward and the band gap increases with the intensity and colours of light. It has been found, taking n-InAs, n-InSb, n-Hg 1−x Cd x Te and n-In 1−x Ga x As y P 1−y lattice matched to InP as examples, that the EEM increases with increasing electron concentration, intensity and wavelength in various manners. The strong dependence of the effective momentum mass (EMM) at the Fermi level on both the light intensity and wavelength reflects the direct signature of the light waves which is in contrast with the corresponding bulk specimens of the said materials in the absence of photo-excitation. The rate of change is totally band-structure-dependent and is influenced by the presence of the different energy band constants. The well known result for the EEM at the Fermi level for degenerate wide gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions, and this compatibility is the indirect test of our generalized formalism.

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Suggestion for Experimental Determinations of 2D and 3D DSLs and Few Related Applications

Ghatak¹,

Bhattacharya²

2013

Debye Screening Length

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The electronic contribution to the elastic constants in strained layer quantum well superlattices of non-parabolic semiconductors with graded interfaces under magnetic quantization: Simplified theory and suggestion for experimental determination

Cited by 24 publications

References 23 publications

Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

Influence of Quantizing Magnetic Field on the Effective Electron Mass in Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory and Relative Assessment

A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves

Suggestion for Experimental Determinations of 2D and 3D DSLs and Few Related Applications

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