The electronic properties of the stanene/MoS<sub>2</sub> heterostructure under strain

Ren, Ceng-Ceng; Feng, Yong; Zhang, Shufeng; Zhang, Chang-wen; Wang, Pei-ji

doi:10.1039/c6ra26169h

Cited by 37 publications

(21 citation statements)

References 45 publications

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“…It has already been reported that even when the substrate belongs to the van der Waals type, it can also induce an external potential for silicene [4] and germanene [51], because of its unique buckling structure. Here we take h-BN as an example to illustrate the substrate effects on stanene [50][51][52][53]. We first consider 1×1 stanene (4.68 Å) on a 2×2 h-BN (5.02 Å) substrate with a 6.8% lattice mismatch 1 .…”

Section: Substrate Effectmentioning

confidence: 99%

Systematic study on stanene bulk states and the edge states of its zigzag nanoribbon

Abid

Liu

2017

New J. Phys.

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Stanene, as a counterpart of graphene, but with much larger spin-orbit coupling (SOC) strength, has recently been synthesized experimentally. Based on first principle calculations and an effective model, we systematically study the electronic and topological properties of bulk stanene under vertical electric field and biaxial strain, which can be naturally introduced by substrates. We find that a topological nontrivial-trivial transition occurs under a critical vertical electric field and an insulator-metal transition happens under critical biaxial strains. We also systematically study the edge state of zigzag nanoribbons. We find that the topological edge state has strong nonlinear dispersion that is different from the previous oversimplified tight-binding (TB) model. A much more practical TB model is built, which captures the strongly nonlinear dispersion of the edge states very well. We investigate four magnetic configurations of the zigzag ribbon edge states in detail and find that the emergence of magnetism for the edge atoms and the magnetization direction have a remarkable impact on the spincurrent-carrying edge channels. Furthermore, a half-metallic state can be induced in stanene nanoribbons by applying a transverse electric field, and opposite spin channels can be chosen by reversing the electric field direction. Our results are instructive for future research and applications on stanene and other related buckled systems.

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Section: Substrate Effectmentioning

confidence: 99%

Systematic study on stanene bulk states and the edge states of its zigzag nanoribbon

Abid

Liu

2017

New J. Phys.

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“…MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoTe 2 ) sired level of electronic properties and in-plane as well as out-of-plane strengths. Besides intense research on different two-dimensional hexagonal nano-structural forms, recently the development of novel application-specific heterostructures has started receiving considerable attention from the scientific community due to the tremendous prospect of combining different single layer materials in intelligent and intuitive ways to achieve several such desired physical and chemical properties [22][23][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Probing the shear modulus of two-dimensional multiplanar nanostructures and heterostructures

et al. 2018

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Generalized high-fidelity closed-form formulae have been developed to predict the shear modulus of hexagonal graphene-like monolayer nanostructures and nano-heterostructures based on a physically insightful analytical approach. Hexagonal nano-structural forms (top view) are common for nanomaterials with monoplanar (such as graphene and hBN) and multiplanar (such as stanene and MoS) configurations. However, a single-layer nanomaterial may not possess a particular property adequately, or multiple desired properties simultaneously. Recently, a new trend has emerged to develop nano-heterostructures by assembling multiple monolayers of different nanostructures to achieve various tunable desired properties simultaneously. Shear modulus assumes an important role in characterizing the applicability of different two-dimensional nanomaterials and heterostructures in various nanoelectromechanical systems such as determining the resonance frequency of vibration modes involving torsion, wrinkling and rippling behavior of two-dimensional materials. We have developed mechanics-based closed-form formulae for the shear modulus of monolayer nanostructures and multi-layer nano-heterostructures. New results of shear modulus are presented for different classes of nanostructures (graphene, hBN, stanene and MoS) and nano-heterostructures (graphene-hBN, graphene-MoS, graphene-stanene and stanene-MoS), which are categorized on the basis of fundamental structural configurations. The numerical values of shear modulus are compared with the results from the scientific literature (as available) and separate molecular dynamics simulations, wherein a good agreement is noticed. The proposed analytical expressions will enable the scientific community to efficiently evaluate shear modulus of a wide range of nanostructures and nanoheterostructures.

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“…As can be seen from the figure, the bandgap of the two electronic structures is a direct bandgap, ReSe 2 is a semiconductor with a bandgap of 1.25 eV, but the bandgap of ReSeS is 1.32 eV, which is larger than that of ReSe 2 . And as shown as figures 2(a) and (c), we can see that the bottom of the conduction band is farther away from the Fermi surface [21]. In figures 2(b), (d) and (e), they are band structures of ReTeSe, ReTeS and ReTe 2.…”

Section: Resultsmentioning

confidence: 78%

The biaxial strain induced properties of ReX₂ and ReXS (X = S, Se, Te) monolayers

Zong

et al. 2020

Mater. Res. Express

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In this paper, we replace the sulfur atom with other atoms based on rhenium disulfide. The monolayer is combined and adjusted on the original basis. Based on the first principle, we studied the structural, electronic and optical properties of the transition metal monolayers of ReX 2 and ReXS (X=S, Se, Te). The structure resembles a 'sandwich'. It is worth noting that ReSeS and ReSe 2 not only retain the direct band gap properties, but also have a large band gap, when the strain changes, not only the band gap changes, but also the nature of the band gap changes with each other. so they show good optical properties, and ReSe 2 and ReSeS have stronger absorption in the ultraviolet band. The band gap opened in ReSeS can be effectively adjusted by biaxial strain, and the band gap varies between direct and indirect.

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The electronic properties of the stanene/MoS₂ heterostructure under strain

Abstract: The effect of a MoS2 substrate on the structural and electronic properties of stanene were systematically investigated by first-principles calculations.

Cited by 37 publications

References 45 publications

Systematic study on stanene bulk states and the edge states of its zigzag nanoribbon

Systematic study on stanene bulk states and the edge states of its zigzag nanoribbon

Probing the shear modulus of two-dimensional multiplanar nanostructures and heterostructures

The biaxial strain induced properties of ReX₂ and ReXS (X = S, Se, Te) monolayers

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The electronic properties of the stanene/MoS2 heterostructure under strain

Abstract: The effect of a MoS2 substrate on the structural and electronic properties of stanene were systematically investigated by first-principles calculations.

Cited by 37 publications

References 45 publications

Systematic study on stanene bulk states and the edge states of its zigzag nanoribbon

Systematic study on stanene bulk states and the edge states of its zigzag nanoribbon

Probing the shear modulus of two-dimensional multiplanar nanostructures and heterostructures

The biaxial strain induced properties of ReX2 and ReXS (X = S, Se, Te) monolayers

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Product

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About

The electronic properties of the stanene/MoS₂ heterostructure under strain

The biaxial strain induced properties of ReX₂ and ReXS (X = S, Se, Te) monolayers