The electronic structure of color centers in BaF2

Lin, Liangcai; Jing, Fuqian

doi:10.1016/s0168-583x(01)01140-5

Cited by 6 publications

(1 citation statement)

References 16 publications

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“…A series of peaks of deep-level emissions were observed. The emission at ∼413 nm was argued to be the results of F n centre formation at higher temperature [10], the emissions at 505 nm and 525 nm were attributed to the deeplevel defects and the emissions at 543 nm and 604 nm were assigned to the F A -centre and the F-centre, respectively [20]. The emission at ∼471 nm was characteristic of the traps present in the ZnO NCs; the one at ∼440 nm was attributed to the emission of ZnO surface states.…”

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confidence: 99%

Optical properties of ZnO nanocrystals embedded in BaF₂ film fabricated by magnetron sputtering

Zang¹,

Liu²,

Mu³

et al. 2007

J. Phys. D: Appl. Phys.

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ZnO nanocrystals (NCs) embedded in a BaF2 matrix have been prepared by a radio-frequency magnetron sputtering technique followed by a thermal annealing process from 400 to 1100 °C. X-ray diffraction results show that ZnO NCs with a hexagonal wurtzite structure are formed in a BaF2 matrix. The average grain sizes are estimated ranging from 7.5 to 33 nm, corresponding to fabricated samples annealed at temperatures from 400 to 800 °C. Photoluminescence showed a very strong ultraviolet near-band-edge (NBE) emission located in the 364–383 nm spectral region. The emission intensity is enhanced and the linewidth is narrowed as the annealing temperature increases. The intensity ratio of ultraviolet NBE emission to deep-level visible is also increased with annealing temperature indicating that deep-level defects in ZnO are suppressed.

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confidence: 99%