The electronic structure of In- and As-terminated InAs(001) surfaces

Electronic structure of bismuth terminated InAs(100)

“…4 shows angular series along the C À J 0 direction from the (4 Â 1)/(1 Â 3) and the (2 Â 6) surfaces. The shape of spectra from the clean InAs(1 0 0) (4 Â 2) agree well with previously published results [13,14]. In the NE-spectrum A 1 and S o are marked.…”

“…In our spectrum (Fig. 4) the character of S x is similar to that of S on the As-terminated InAs(1 0 0) surface with respect to dispersion [13,2] (the dispersion of S x is marked in Fig. 4).…”

“…In the NE-spectrum A 1 and S o are marked. The first of these was earlier identified as a surface state [13], and S o (weak intensity at the Fermi level) was earlier observed and interpreted as emission from the accumulation layer on the clean surface [6].…”

“…4) Intensity / a.u. the (4 Â 2) surface [13], was assigned as a surface state with small dispersion, originating either from the back bonds or dimer-bonds according to Ref. [13].…”

“…An example is the indium-rich (4 Â 2)/c(8 Â 2) reconstruction, recently solved by a surface X-ray diffraction (SXDR) study by Kumpf [11] and the arsenic-rich (2 Â 4)-InAs(1 0 0) surface described by the b(2 Â 4) reconstruction (including adsorbed As-dimer in the top layer and another As-dimer in the third layer) [12]. For both surfaces, angle-resolved photoemission studies have revealed several surface states [13,14]. A Bi-induced (2 Â 6)/c(2 Â 12)-Bi/InAs(1 0 0) reconstruction was recently observed above 1 ML Bi coverage, and a structural model was proposed including two layers with dimers [15].…”