The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

Hu, Xudong; Choi, B.K.; Barnaby, Hugh; Fleetwood, D.M.; Schrimpf, R.D.; Lee, Sungchul; Shojah-Ardalan, S.; Wilkins, R.; Mishra, Umesh K.; Dettmer, R.

doi:10.1109/tns.2004.825077

Cited by 120 publications

(61 citation statements)

References 9 publications

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“…The calculations suggest that, while low energy recoils do not create defects in a perfect lattice, these particles can interact with pre-existing defects, formed during processing, and with radiation-generated defect complexes in the end-of-track regions. 29,36,107,108 The end-of-track regions have high concentrations of vacancies. Threshold-voltage shifts and increases in 1/f noise are observed in proton-irradiated AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated device degradation.…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

282

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

282

130

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“…Several previous studies were conducted on the effects of irradiation on HFET devices. In 2004, Hu et al 1 reported the energy dependence of proton-induced degradation and recovery of AlGaN/GaN HFETs. In 2008, Sonia et al 2 studied the effect of 2 MeV proton-irradiation on HFETs and found that irradiation with protons up to fluences of 10 13 cm −2 did not degrade the operation of the devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

Fang

Farlow

Claflin

et al. 2009

Journal of Applied Physics

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Effects of 1 MeV electron-irradiation at room temperature on the electrical properties of AlGaN/ GaN heterostructures, including leakage currents, threshold voltages, and electron traps, have been investigated using Schottky barrier diodes ͑SBDs͒ fabricated on the AlGaN. The SBDs, before and after the irradiation with a dose of 5 ϫ 10 15 cm −2 , were characterized by temperature dependent current-voltage and capacitance-voltage measurements and deep level transient spectroscopy. It is found that the irradiation causes ͑i͒ significant increase in leakage currents, dominated by tunneling conduction, at both reverse and low-forward biases; ͑ii͒ a clear negative shift in threshold voltage in the pinch-off region; and ͑iii͒ creation of traps A e ͑ϳ1.1 eV͒ or A 2 ͑1.2 eV͒ and E e ͑0.09 eV͒ in the GaN buffer and AlGaN regions. The irradiation-induced traps can be used to account for the increase in leakage currents and shift in threshold voltage. However, as compared to traps A 2 ͑1.2 eV͒ and E͑0.13 eV͒ induced in thick GaN layers by electron-irradiation, the irradiation-induced traps in the AlGaN/GaN heterostructures show some changes in activation energy and electron capture behavior.

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“…Unlike Si MOS transistor, some previous works regarding RF HEMT [4,5,6] suggest that SEEs into AlGaN/GaN HEMTs are mainly due to displacement damage more than to ionization effects. However, todays TCAD radiation models cannot take into account displacement damage, which would be the reason why TCAD tools are not yet well-suited to these new technologies and finally the study may become unsuccessful.…”

Section: Characterization/modeling Of Immunity To Natural Radiationsmentioning

confidence: 99%

A methodologic project to characterize and model COTS component reliability

Durier

Bensoussan

Zerarka

et al. 2015

Microelectronics Reliability

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OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. This is an author-deposited version published in : http://oatao.univ-toulouse.fr/ Eprints ID : 18034 The industries of transportation as the space industry are faced with a strong global economic competition which sets economic constraints on the cost of the functions. The use of COTS (Commercial Off-The-Shelf) components in embedded systems is more and more necessary to shorten the development cycles and reduce manufacturing costs. The application of electronic components comes overwhelmingly from public sectors whose requirement is to provide, in short development cycles, technological innovations including risk and cost mitigation. These development cycles must incorporate the specific constraints of embedded systems in terms of reliability, dependability, and availability, held in harsh environment and life. Due to the low volume of components supplying the market of embedded systems, component manufacturers are unlikely to provide information necessary to supporting folders for certification or qualification. It is therefore necessary for the Space, Aeronautics and Automotive industries to characterize the performance and robustness of these COTS components in the operational and environmental conditions of their applications. This paper presents the objectives and main challenges of a sponsored project dedicated to characterize and model COTS reliability.

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The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

Cited by 120 publications

References 9 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

A methodologic project to characterize and model COTS component reliability

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