The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

Zhong, Haiyang; Guo, Anran; Guo, Guohui; Li, Wei; Jiang, Yadong

doi:10.1186/s11671-016-1528-0

Cited by 32 publications

(28 citation statements)

References 28 publications

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“…In this condition, whether the back surface of the detector is introduced with or without black silicon, there will be a limited influence on the device response in the visible wavelength. Different from the detector with black silicon at the front surface [ 21 ], device 2 demonstrates a better response in the visible wavelength. That is why there is a relatively little improvement in visible light response according to the measured responsivity curve.…”

Section: Resultsmentioning

confidence: 99%

“…Micro- and nanostructures of black silicon have been the focus of intense researches in recent years due to their extensive device application. A Si-PIN photoelectronic detector with black silicon at the front surface has been investigated in our early study [ 21 ]. This device structure has a wide depletion layer so that it can reduce the influence of carrier diffusion movement and achieve the purpose of improving device sensitivity and response speed.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

et al. 2018

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Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

et al. 2018

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“…Recently, techniques based on reactive ion etching (RIE) and metal catalyzed chemical etching (MCCE) have been developed. Nevertheless, they also have some problems, such as costly facility, required operational conditions, and wasted liquid that may be harmful to the natural environment [ 37 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 ]. An appealing technique is that of directly ablating silicon surface to obtain “penguin-like” microstructures via femtosecond lasering in toxic gas atmospheres such as SF 6 , Cl 2 , and H 2 S [ 51 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 ].…”

Section: Introductionmentioning

confidence: 99%

Facile Fabrication of Self-Similar Hierarchical Micro-Nano Structures for Multifunctional Surfaces via Solvent-Assisted UV-Lasering

Zhang

Qin

et al. 2020

Micromachines

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Cross-scale self-similar hierarchical micro–nano structures in living systems often provide unique features on surfaces and serve as inspiration sources for artificial materials or devices. For instance, a highly self-similar structure often has a higher fractal dimension and, consequently, a larger active surface area; hence, it would have a super surface performance compared to its peer. However, artificial self-similar surfaces with hierarchical micro–nano structures and their application development have not yet received enough attention. Here, by introducing solvent-assisted UV-lasering, we establish an elegant approach to fabricate self-similar hierarchical micro–nano structures on silicon. The self-similar structure exhibits a super hydrophilicity, a high light absorbance (>90%) in an ultra-broad spectrum (200–2500 nm), and an extraordinarily high efficiency in heat transfer. Through further combinations with other techniques, such surfaces can be used for capillary assembling soft electronics, surface self-cleaning, and so on. Furthermore, such an approach can be transferred to other materials with minor modifications. For instance, by doping carbon in polymer matrix, a silicone surface with hierarchical micro–nano structures can be obtained. By selectively patterning such hierarchical structures, we obtained an ultra-high sensitivity bending sensor. We believe that such a fabrication technique of self-similar hierarchical micro–nano structures may encourage researchers to deeply explore the unique features of functional surfaces with such structures and to further discover their potentials in various applications in diverse directions.

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“…Due to its nanostructured surface and narrow band gap, it is feasible to achieve high absorptance (>90%) over a broad spectrum from 250 nm to 2500 nm [26]. Additionally, the high photoconductive gain and responsivity (0.57 A/W at 1050 nm wavelength) [27] gives rise to the practical device applications for IR detection.…”

Section: Introductionmentioning

confidence: 99%

Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection

Ilyas

Song

et al. 2018

Sensors

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Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.

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The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

Cited by 32 publications

References 28 publications

Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Facile Fabrication of Self-Similar Hierarchical Micro-Nano Structures for Multifunctional Surfaces via Solvent-Assisted UV-Lasering

Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection

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