The Epitaxy of 2D materials growth

Abstract

A general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate was proposed. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that unidirectional align-ment of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experi-mental observations on 2D materials’ growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

“…36 The primary benet of epitaxy is homogeneity in composition, controlled growth parameters, and a better knowledge of the development process itself. 37 GaN is always grown on a foreign substrate; thus, it follows a heteroepitaxial growth. 38,39 For the formation of the epilayers of III-V compound semiconductors and other materials, several epitaxial processes have been applied.…”

Bridging synthesis and controllable doping of monolayer 4-inch transition-metal dichalcogenides single crystals with record-breaking electron mobility

“…However, many fundamental challenges should be resolved before 2D TMDCs meet the industry criteria for practical applications in electronics. For example, the large-area growth of single crystals to decrease defective grain boundaries 9,10 , the effective doping of 2D TMDCs to modulate band structures 11,12 , and the optimization design of interfaces to reduce contact resistances [13][14][15][16][17][18] . Therein, controllable synthesis and effective doping of wafer-scale 2D TMDCs single crystals are two central tasks for extending Moore's law beyond silicon.…”