The epitaxy of zinc sulphide on silicon

Rawlins, T. G. R.

doi:10.1007/bf00574860

Cited by 22 publications

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF₂

Messerschmidt

1972

Cryst Res and Technol

View full text Add to dashboard Cite

Reflexionselektronenbeugungsuntersuchungen an HV-aufgedampften CdSe-Schichten auf CaF,Reflection electron diffraction investigations were performed with high vacuum deposited films of CdSe on to air cleaved (111) planes of CaF,. Together there occur the cubic (111) orientation and the hexagonal (0001) orientation. At lower substrate temperatures (440 "C) the cubic phase dominates. At higher substrate temperatlures (600 "C) the hexagonal phase is predominant.Twins and multiple twins are observed in all films. Along the (111) directions of the twins and multiple twins, respectively, additionally there occur hexagonal stacking sequences. With increasing film thickness multiple twins become less frequently. A strong increasing of the deposition rate (80 -8-l) increases the content of defects in the films (polycrystalline fractions). The appearance of satellite spots in transmission electron diffraction patterns and in reflection electron diffraction patterns will be discussed.

show abstract

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF₂

Messerschmidt

1972

Cryst Res and Technol

View full text Add to dashboard Cite

show abstract

Polaritätsabhängige Struktureffekte in tetraedrisch koordinierten Halbleitern

Hübner

Kühn

1972

Cryst Res and Technol

View full text Add to dashboard Cite

Auf der Grundlage der semicmpirischan dielektrischen Strukturtheorie wurde ein empfindlicher Parameter gefunden, dcr es gestattet, die relative Stabilitat der Zinkblende und Wurtzitstruktur in Epitaxieschichton von AIIBvI-Verbindungen auf (1 11)-orientierten AIIIBV-, Si-und Ge-Substraten vorherzusagen.. Die Ergebnisse des vorgeschlagenen theoretischen Modells befinden sich in guter obereinstimmung mit den Experimenten.On the basis of the semiempirical dielectric theory of structure a sensitive parameter accounting for the relative stability of the zincblende and tho wiirtzite structure i n epitaxial layers of AIIBvI-compounds on (1 11)-orientated AIIIBV, Si, and Ge substrates is introduced. The statemonts of the proposed theoretical model are in good agreement with the experiment,al rcsu1t.s.

show abstract

Epitaxial growth of CdTe on CdS substrates

Paorici¹,

Pelosi²,

Zuccalli³

1972

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

A closed‐tube chemical‐transport technique to grow epitaxial layers of cadmium telluride on the basal planes of cadmium sulphide is described. In this technique the transport agent of the reaction is hydrochloric acid obtained by thermal dissociation of solid NH4Cl. It is shown that the introduction of extra hydrogen in the closed system allows a lowering of the substrate temperature at which epitaxial deposition may occur. The particular geometry of the closed tube is discussed in view of the obtainement of a diffusion‐limited transport mechanism.

show abstract

The epitaxy of zinc sulphide on silicon

Cited by 22 publications

References 17 publications

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF₂

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF₂

Polaritätsabhängige Struktureffekte in tetraedrisch koordinierten Halbleitern

Epitaxial growth of CdTe on CdS substrates

Contact Info

Product

Resources

About

The epitaxy of zinc sulphide on silicon

Cited by 22 publications

References 17 publications

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF2

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF2

Polaritätsabhängige Struktureffekte in tetraedrisch koordinierten Halbleitern

Epitaxial growth of CdTe on CdS substrates

Contact Info

Product

Resources

About

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF₂

Reflexionselektronenbeugungsuntersuchungen an HV‐aufgedampften CdSe‐Schichten auf CaF₂