The Equilibrium of the Chemisorption of TiCl4,  H 2, and  N 2 on Titanium Nitride

You, Ming Shyong; Nakanishi, Naruhiko; Kato, Eiichi

doi:10.1149/1.2085793

Cited by 19 publications

(6 citation statements)

References 2 publications

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“…1b) is located only 1.7 kcal/mol higher. A study of hydrogen chemisorption on TiN using a thermal conductivity detector at 900 and 950 K gave an adsorption energy of 60.3 kcal/mol [27]. The Ti-H bond length is more influenced by the relaxation of the surface and is reduced to [29].…”

Section: Adsorption and Diffusion Of Atomic Hydrogen On The Tin (100)mentioning

confidence: 99%

Theoretical Study of Hydrogen Adsorption and Diffusion on TiN(100) Surface

Siódmiak

Govind

Andzelm

et al. 2001

phys. stat. sol. (b)

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TiN bulk and surface energy and hydrogen atom adsorption at three different sites have been studied using density functional theory (DFT) with local and non-local exchange-correlation functionals. Calculations of surface energies confirm the experimental findings that the (100) surface has the lowest and the (111) surface the highest surface energy, respectively. Adsorption of H on top of Ti atom is more favorable by 1.7 kcal/mol than on top of N atom and is in agreement with plane-wave calculations and experimental results available in the literature. We also discuss the surface diffusion scenario of H on the (100) surface of TiN.

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Section: Adsorption and Diffusion Of Atomic Hydrogen On The Tin (100)mentioning

confidence: 99%

Theoretical Study of Hydrogen Adsorption and Diffusion on TiN(100) Surface

Siódmiak

Govind

Andzelm

et al. 2001

phys. stat. sol. (b)

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“…38 In this study, the main adsorbed species are chloride, hydrogen, and nitrogen, etc. You et al 39 showed that the capability of adsorption of chloride is much stronger than hydrogen and nitrogen, and the adsorbed species are considered to tend to combine with Ti atoms more than with N atoms on the TiN surface. The ͑111͒ planes are the exchange layers of pure Ti and pure N, whereas the Ti layer is commonly the outest layer due to the lower surface energy.…”

Section: The Fastest Growth Orientation Of Crystalsmentioning

confidence: 99%

Texture formation in titanium nitride films prepared by chemical vapor deposition

Cheng

Hon

1996

Journal of Applied Physics

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Articles you may be interested inMicrostructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasmaassisted chemical vapor deposition Growth behavior of copper metalorganic chemical vapor deposition using the (hfac)Cu(VTMOS) precursor on titanium nitride substrates The ͗100͘, ͗110͘, and ͗211͘ textured TiN films were obtained in a chemical vapor deposition system using TiCl 4 , N 2 , and H 2 as reaction gases. The microstructure of these textured films was investigated by scanning electron microscopy and transmission electron microscopy. The results show that the ͗211͘, ͗110͘, and ͗100͘ textured films consist of laminated twinned grains, multiply twinned grains, and nearly thermodynamic equilibrium grains respectively at the growing stage. The formation of these textures is discussed based on nucleation and growth mechanisms. At a lower deposition temperature with higher nitrogen concentration, the decahedral multiply twinned and laminated twinned crystals dominate over crystals with single crystalline structure. After competitive growth of these crystals, the multiply twinned crystals with ͗110͘ twin axis perpendicular to substrate surface survive. At an intermediate deposition temperature with lower nitrogen concentration, the laminated twinned crystals dominate the growth and the ͗211͘ orientation along the ͑111͒ twin planes possesses the fastest growth rate and form ͗211͘ textured films. At a higher deposition temperature above 1200°C, the single crystalline structure dominates and forms ͗100͘ textured films. The effect of surface adsorption on texture formation is discussed.

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“…Cl.s + H.s ~-HCI(g) + 2s [30] N.s + H.s ~ s.NI-I + s [31] where s denotes an active site. The rds of this alternative reaction model is given by Eq.…”

Section: Ka = K12k~/2k~/2kskllmentioning

confidence: 99%

A Kinetic Study of Titanium Nitride Chemical Vapor Deposition Using Nitrogen, Hydrogen, and Titanium Tetrachloride

Dekker

Put

Veringa

et al. 1994

J. Electrochem. Soc.

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The kinetics of the growth of titanium nitride (TIN) by hot-wall atmospheric pressure chemical vapor deposition (CVD) has been studied using titanium tetrachloride (TIC14), hydrogen (H2), and nitrogen (N~) as reactants. The growth rate as a function of reactant concentration at different reaction temperatures is determined. The growth rate dependence in the TiC14 input concentration changes from a positive to a negative order behavior with increasing reactant concentration, and the observed maximum growth rate shifts to a higher TiC14 input concentration with increasing reaction temperature. For the growth rate a square root dependence in the N2 concentration is observed in all cases, and for the growth rate a positive order dependence in the H2 concentration is observed which changes from 0.5 to 1.5. A reaction model has been proposed based on isothermal Langmuir adsorption behavior with mutual displacement on titanium sites at the surface, and an indirect mutual displacement on nitrogen sites at the surface. This reaction model consists of a set of elementary gas-phase, adsorption, and surface reactions which are quasi-equilibrated, and a rate-determining step involving the reaction at the surface between an adsorbed TIC13 species on a nitrogen site, and an adsorbed NH species on a titanium site. Using this model the experimental and reported growth rate data can be understood as a function of reactant concentration within the temperature region from 1000 to 1273 K.Chemical vapor deposition (CVD) is a well-known synthesis method for producing titanium nitride (TIN) layers. 1-2~ These TiN layers are used, because of their electrical conductivity, 2-8 or structural properties such as wear and corrosion resistance. 7-9 TIN layers can be used as a diffusion barrier between metal and silicon in electronic circuits. 2-4 These layers are deposited in a cold-wall low-pressure CVD apparatus at substrate temperatures between 600 and 900 K using titanium tetrachloride (TiC14), ammonia (NH3), and hydrogen (H2) according to reaction 12-6

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The Equilibrium of the Chemisorption of TiCl4, H 2, and N 2 on Titanium Nitride

Cited by 19 publications

References 2 publications

Theoretical Study of Hydrogen Adsorption and Diffusion on TiN(100) Surface

Theoretical Study of Hydrogen Adsorption and Diffusion on TiN(100) Surface

Texture formation in titanium nitride films prepared by chemical vapor deposition

A Kinetic Study of Titanium Nitride Chemical Vapor Deposition Using Nitrogen, Hydrogen, and Titanium Tetrachloride

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