The Error Due to the Peltier Effect in Direct-Current Measurements of Resistance

Kirby, Christine; Laubitz, M. J.

doi:10.1088/0026-1394/9/3/001

Cited by 39 publications

(32 citation statements)

References 11 publications

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“…10 This causes an overestimation of the resistance for both positive and negative Seebeck coefficients. 60,61 To reduce these errors either AC or pulsed DC measurements, where the voltage is measured before and aer turning the current on, are used. This also removes constant offset voltages from the Seebeck effect.…”

Section: This Journal Is © the Royal Society Of Chemistry 2015mentioning

confidence: 99%

Measuring thermoelectric transport properties of materials

Borup

Boor

Wang

et al. 2015

Energy Environ. Sci.

314

256

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In this review we discuss considerations regarding the common techniques used for measuring thermoelectric transport properties necessary for calculating the thermoelectric figure of merit, zT.Advice for improving the data quality in Seebeck coefficient, electrical resistivity, and thermal conductivity (from flash diffusivity and heat capacity) measurements are given together with methods for identifying possible erroneous data. Measurement of the Hall coefficient and calculation of the charge carrier concentration and mobility is also included due to its importance for understanding materials. It is not intended to be a complete record or comparison of all the different techniques employed in thermoelectrics. Rather, by providing an overview of common techniques and their inherent difficulties it is an aid to new researchers or students in the field. The focus is mainly on high temperature measurements but low temperature techniques are also briefly discussed. Measurement guide for authors and reviewersMeasurements should always be repeatable on the same sample, and on new samples produced in the manner described. Thermoelectric effects are steady-state effects so any time dependence or hysteresis is indication that phenomena outside thermoelectric effects are at play. Materials with chemical oxidants/ reductants incorporated are likely to contain unstable internal voltages not due to thermoelectric effects. Unconventional samples or measurement methods deserve reexamination of assumptions. AccuracyTrue accuracy is not represented by a single heating curve from one sample, even with error bars representing instrument precision. Showing heating and cooling data and multiple samples gives a better indication of measurement variability for a typical type of sample. Anisotropy, cracks and inhomogeneities can lead to large variation in measurements. One unusual data point or sample outside the trend, particularly at temperatures just prior to decomposition, usually indicates a problem in sample or measurement. Unusual resultsTypical thermoelectric materials behave like heavily doped semiconductors with thermopower (absolute value of Seebeck coefficient) of less than 300 mV K À1 , resistivity of 0.1-10 mU cm, and are optimized when electronic contribution to the thermal conductivity is about 1/2 the total thermal conductivity. Extraordinary results should be checked by extra means. Unusual results can be caused by bad contacts, thermocouples that have broken, chemically reacted, or simply dried out of calibration. Exceptional resultsReported values of zT > 1 or in unexpected materials receive extra attention from reviewers who may ask for additional conrmation. Convincing measurements may need to be performed on the same sample along the same direction and be repeatable with other samples and measurement methods. There is no official record keeping for claimed or veried zT values. Several papers, patents and press releases have claimed extraordinarily high zT but most have been forgotten over time and likely resul...

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Section: This Journal Is © the Royal Society Of Chemistry 2015mentioning

confidence: 99%

Measuring thermoelectric transport properties of materials

Borup

Boor

Wang

et al. 2015

Energy Environ. Sci.

314

256

View full text Add to dashboard Cite

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“…As demonstrated in Ref. [9], the above quasi-static approach is valid below some critical frequency f cr = χ/l 2 0 . For example, for degenerate electrons the thermal diffusion coefficient χ is of the order of the diffusion coefficient D = σ e 2 dN0 dµ −1…”

Section: ∆T = ∆αL0mentioning

confidence: 63%

“…[9,10]. The parallel magnetoresistivity found to originate from the spin and,if exists, valley splitting of 2D energy spectrum.…”

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confidence: 91%

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Thermal correction to resistivity in dilute 2D Si-based systems

Cheremisin

2005

Physica E: Low-dimensional Systems and Nanostructures

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We calculate the resistivity of 2D electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function of temperature, expressed in units of h e 2 (kF l) −1 . The giant parallel magnetiresistivity found to result from the spin and, if exists, valley splitting of the energy spectrum. Our analysis of compressibility and thermopower points to thermodynamic nature of metal-insulator transition in 2D systems. PACS numbers: 73.40.Qv, 71.30+h, 73.20.Fz Recently, a great deal of interest has been focussed on the anomalous transport behavior of a wide variety of low-density 2D electron [1,2] and hole [3,4,5] systems. It has been found that, below some critical density, the cooling causes an increase in resistivity, whereas in the opposite high density case the resistivity decreases. Another unusual property of dilute 2D systems is their enormous response to parallel magnetic field. At low temperatures the magnetic field found to suppress the metallic behavior of 2D electron(hole) gas and result in strong increasing of resistivity upon enhancement of spin polarization degree [6,7]. At high temperatures the parallel magnetoresistivity starts to be unaffected by magnetic field when the temperature exceeds a value being of the order of Zeeman energy. A strong perpendicular magnetic field, if applied simultaneously with the parallel one, results in suppression of parallel magnetoresistivity [8]. Although numerous theories have been put forward to account for these effects, the origin of the above behavior is still the subject of a heated debate.The ohmic measurements known to be carried out at low current I → 0 in order to prevent heating. Usually, only the Joule heat is considered to be important. In contrast to the Joule heat, the Peltier and Thomson effects are linear in current. As shown in Refs. [9,10,11], the Peltier effect influences ohmic measurements and results in a correction to a measured resistance. When current is flowing, one of the sample contacts is heated, and the other cooled, because of the Peltier effect. The contact temperatures are different. The voltage drop across the circuit includes the Seebeck thermoelectromotive force, which is linear in current. Finally, there exists a thermal correction ∆ρ, to the ohmic resistivity, ρ, of the sample. For degenerate electrons, ∆ρ/ρ ∼ (kT /µ) 2 , where µ is the Fermi energy. Hence, the correction may be comparable with the ohmic resistance of a sample when kT ∼ µ.In the present paper, we report on a study of low-T transport in 2D electron(hole) gas, taking into account both the electron degeneracy and the Peltier-effectinduced correction to resistivity. [9,10]. The parallel magnetoresistivity found to originate from the spin and,if exists, valley splitting of 2D energy spectrum.Let us consider, for clarity, the (100) MOSFET 2DEG system. The electrons are assumed to occupy the first quantum-well subband with isotropic energy spectrum ε(k) =h 2 k 2 2m...

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“…The third mechanism that could result in anomalous frequency dependence is sometimes referred to as a Peltier effect in dc measurements of resistors [69]. While ordinary thermal voltages will cancel upon current reversal in a resistance measurement, this second-order effect is polarity independent and is additive under current reversal.…”

Section: Second-order Thermoelectric Effectsmentioning

confidence: 99%

The NIST Johnson Noise Thermometry System for the Determination of the Boltzmann Constant

Flowers-Jacobs

Pollarolo

Coakley

et al. 2017

J. RES. NATL. INST. STAN.

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In preparation for the redefinition of the International System of Units (SI), five different electronic measurements of the Boltzmann constant have been performed using different Johnson noise thermometry (JNT) systems over the past seven years. In this paper, we describe in detail the JNT system and uncertainty components associated with the most recent National Institute of Standards and Technology (NIST) determination of the Boltzmann constant: k = 1.380642 9(69) × 10 −23 J/K, with a relative standard uncertainty of 5.0 × 10 −6 and relative offset of −4.05 × 10 −6 from the Committee on Data for Science and Technology (CODATA) 2014 recommended value. We discuss the input circuits and the approach we used to match the frequency response of two noise sources. We present new measurements of the correlated noise of the 4 K on-chip resistors in the quantum-accurate, pseudorandom, voltagenoise source, which we used to estimate the correlated, frequency-dependent, nonthermal noise in our system. Finally, we contrast our system with those used in other measurements and speculate on future improvements.

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The Error Due to the Peltier Effect in Direct-Current Measurements of Resistance

Cited by 39 publications

References 11 publications

Measuring thermoelectric transport properties of materials

Measuring thermoelectric transport properties of materials

Thermal correction to resistivity in dilute 2D Si-based systems

The NIST Johnson Noise Thermometry System for the Determination of the Boltzmann Constant

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