The estimation of sputtering yields for SiC and Si

Ecke, G.; Kosiba, R.; Kharlamov, V. S.; Trushin, Yu. V.; Pezoldt, Jörg

doi:10.1016/s0168-583x(02)01273-9

Cited by 38 publications

(25 citation statements)

References 36 publications

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“…Determination of the sputtering depth is strictly connected with the number of atoms removed for each sputtering ion. The sputtering yield depends on the chemical state of the material being sputtered, ion current density, energy of incoming ions, type of noble gases and incidence angle of the sputtering ions as well as temperature [18,19]. It is well known that in the case of silicon for the same values of ion energy for noble gas ions, the sputter yield depends on the mass of noble gases e.g.…”

Section: Resultsmentioning

confidence: 99%

Chemical composition of native oxides on noble gases implanted GaAs

et al. 2016

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Section: Resultsmentioning

confidence: 99%

Chemical composition of native oxides on noble gases implanted GaAs

et al. 2016

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“…The T-DYN dynamic code, which is based on the trajectory of ions in matters ͑TRIM͒ code, can be used to simulate energetic atom displacement in solids. [19][20][21][22] T-DYN simulations were performed under conditions of ion impingement perpendicular to the surface of a semi-infinite medium consisting of cobalt, constant ion energy, and no Ar + ion implantation. Details of the computational algorithms of the T-DYN code can be found elsewhere.…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

Surface modification of magnetic recording media by filtered cathodic vacuum arc

Zhang¹,

Komvopoulos²

2009

Journal of Applied Physics

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Interface reactions between quaternary cobalt alloys and carbon coating in thin film disk media Surface modification of a magnetic recording medium was accomplished by filtered cathodic vacuum arc ͑FCVA͒. The carbon overcoat of thin-film disks was removed by Ar + ion sputter etching in vacuum to prevent oxidation of the exposed magnetic medium, which was then modified by FCVA carbon plasma under conditions of zero and Ϫ100 V pulsed substrate bias. Monte Carlo simulations performed with the T-DYN code, x-ray photoelectron spectroscopy ͑XPS͒, atomic force microscopy ͑AFM͒, and surface force microscopy ͑SFM͒ provided insight into carbon implantation profiles, surface chemical composition, roughness, and nanomechanical properties of the surface-treated magnetic medium. The dependence of surface modification on the FCVA treatment conditions is discussed in the context of T-DYN, XPS, AFM, and SFM results. The findings of this study demonstrate the potential of FCVA to provide overcoat-free magnetic recording media exhibiting oxidation resistance and enhanced nanomechanical properties.

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“…To examine the validity of applying the potential to SiC etching, we calculated the sputtering yield of SiC by Ar shown in Table 1. In order to compare with the experimental data [22], the incident energies are 500 and 700 eV Ar and the incident angle is set to 30°with respect to surface plane. The data show that the sputtering yield obtained by our MD simulations is comparable to experimental data and that obtained from TRIM [22].…”

Section: Computational Descriptionsmentioning

confidence: 99%

“…In order to compare with the experimental data [22], the incident energies are 500 and 700 eV Ar and the incident angle is set to 30°with respect to surface plane. The data show that the sputtering yield obtained by our MD simulations is comparable to experimental data and that obtained from TRIM [22]. The Molière potential was used to describe interactions between Ar-C and Ar-Si [23].…”

Section: Computational Descriptionsmentioning

confidence: 99%