The evolution of total internal reflection Raman spectroscopy for the chemical characterization of thin films and interfaces

Nyamekye, Charles K. A.; Bobbitt, Jonathan M.; Zhu, Qiaochu; Smith, Emily A.

doi:10.1007/s00216-020-02510-1

Cited by 10 publications

(7 citation statements)

References 91 publications

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Section: Generally Used Spectroscopic Methods For Np Probingmentioning

confidence: 99%

“…The application of Raman spectra to analyze the surface of NPs is promoted by the SERS phenomenon reported in the 1970s [113,114] and the application of TIR experimental geometry as in the IR studies. [115] The Raman signal of molecules on or close to the surface of plasma nanostructures may be significantly heightened, which is well-known as SERS. [114,116,117] There are two interpretations for the enhancement: one is the electromagnetic enhancement caused by the resonance of conduction electrons in metal under radiation (with an enhancement factor of 10 4 -10 8 ), and the other is the chemical enhancement attributed to the interaction between adsorbed molecules and the metal, such as charge transfer (with an enhancement factor of 10-10 2 ).…”

Section: Raman Spectroscopymentioning

confidence: 99%

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In Situ Spectroscopic Probes for Structures and Processes at the Surface of Noble Metallic Nanoparticles

Xue

Guha

Yuan

et al. 2021

Part & Part Syst Charact

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Section: Generally Used Spectroscopic Methods For Np Probingmentioning

confidence: 99%

Section: Raman Spectroscopymentioning

confidence: 99%

In Situ Spectroscopic Probes for Structures and Processes at the Surface of Noble Metallic Nanoparticles

Xue

Guha

Yuan

et al. 2021

Part & Part Syst Charact

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“…The bandgap of the samples was calculated by DRS, which is shown in Figure 5. The calculation was done by using a kabulka maunk and tauc plot method using reflection data 32,33 . The obtained bandgap of a sample with Sn=0%, which represents Sb 2 S 3 , is 1.68 eV, whereas the formation of Sb 2 Sn 2 S 5 significantly changes the bandgap from 1.68 to 2.31eV, as shown in Figure 5(a-e).…”

Section: Methodsmentioning

confidence: 99%

Role of Sn Inclusions on Structural, Electrical and Optical Properties of Sb2S3

Abdullah¹,

Syed²,

Ali³

et al. 2021

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Tin an mony sulfide (TAS) thin films are deposited on a glass substrate using a two-source thermal evapora on method. The doping was done to inves gate its results on the structural, electrical, and op cal proper es of n-an mony sulfide thin films. XRD studies disclosed that annealed films exist in the Sn 2 Sb 2 S 5 phase. The accurate informa on about the composi on and concentra on depth of the as-deposited and annealed Sn 2 Sb 2 S 5 thin-films was recorded by the Rutherford backsca ering spectroscopy (RBS) technique. The photoconduc vity response of these films was also excellent and enhanced with the increasing concentra on of n sulfide. The obtained bandgap was in the range of 1.68-2.31 eV. The thickness of the films was observed to be 240 nm to 336 nm, and the thin films possessed P-type conduc vity. Electrical proper es are significantly enhanced for the ternary compound Sn 2 Sb 2 S 5 as compared to Sb 2 S 3 . Results show that an mony n sulfide has excellent poten al in photovoltaic applica ons.

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“…In the literature, the peak at ~1447 cm −1 has been attributed to either the scissoring mode of -CH 2 [51][52][53] or the C=C ring stretching in thiophene (containing nitrogen) [54,55]. Moreover, a peak ~1450 cm −1 in nanocrystalline diamond is said to arise from the sum modes of sp 2 C=C and C-H vibrations of trans-polyacetylene type segments at grain boundaries [42,56].…”

Section: Reduction In Gomentioning

confidence: 99%

Applicability of Atmospheric Pressure Plasma Jet (APPJ) Discharge for the Reduction in Graphene Oxide Films and Synthesis of Carbon Nanomaterials

Kumar

Ibaceta-Jaña

Maticuic

et al. 2021

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Atmospheric pressure plasma jets (APPJ) are widely used in industry for surface cleaning and chemical modification. In the recent past, they have gained more scientific attention especially in the processing of carbon nanomaterials. In this work, a novel power generation technique was applied to realize the stable discharge in N2 (10 vol.% H2) forming gas in ambient conditions. This APPJ was used to reduce solution-processed graphene oxide (GO) thin films and the result was compared with an established and optimized reduction process in a low–pressure capacitively coupled (CCP) radiofrequency (RF) hydrogen (H2) plasma. The reduced GO (rGO) films were investigated by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Effective deoxygenation of GO was observed after a quick 2 s treatment by AAPJ. Further deoxygenation at longer exposure times was found to proceed with the expense of GO–structure integrity. By adding acetylene gas into the same APPJ, carbon nanomaterials on various substrates were synthesized. The carbon materials were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and energy-dispersive X-ray (EDX) analyses. Fullerene-like particles and graphitic carbon with short carbon nanotubes were detected on Si and Ag surfaces, respectively. We demonstrate that the APPJ tool has obvious potential for the versatile processing of carbon nanomaterials.

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The evolution of total internal reflection Raman spectroscopy for the chemical characterization of thin films and interfaces

Cited by 10 publications

References 91 publications

In Situ Spectroscopic Probes for Structures and Processes at the Surface of Noble Metallic Nanoparticles

In Situ Spectroscopic Probes for Structures and Processes at the Surface of Noble Metallic Nanoparticles

Role of Sn Inclusions on Structural, Electrical and Optical Properties of Sb2S3

Applicability of Atmospheric Pressure Plasma Jet (APPJ) Discharge for the Reduction in Graphene Oxide Films and Synthesis of Carbon Nanomaterials

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