The excess enthalpies of liquid GaGeTe and GaSnTe alloys

Gather, B.; Irle, E.; Blachnik, R.

doi:10.1016/0022-5088(87)90023-3

Cited by 7 publications

(11 citation statements)

References 10 publications

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“…The description of the ternary Ga-Sn-Te is not known over the whole composition and temperature range. There are some investigations on vertical sections Ga2Te3-SnTe [85,86] and GaTe-SnTe [86,87]. The three ternary compounds, Ga2SnTe3, GaSnTe2 [87,88], and Ga6SnTe10 [85,86,89,90], have been reported in this system.…”

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

“…There are some investigations on vertical sections Ga2Te3-SnTe [85,86] and GaTe-SnTe [86,87]. The three ternary compounds, Ga2SnTe3, GaSnTe2 [87,88], and Ga6SnTe10 [85,86,89,90], have been reported in this system. Rustamov et al [87] investigated the GaTe-SnTe system using the ultrasonic technique.…”

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

“…Dedegkaev et al [85] studied the Ga 2 Te 3 -SnTe system using XRD and reported the ternary phase Ga 6 SnTe 10 with a cubic primitive unit cell of lattice parameter 10.2 Å. Gather et al [86] measured excess enthalpy using a heat flow calorimeter for the ternary liquid Ga-Sn-Te. Moreover, they have determined the Ga 2 Te 3 -SnTe and GaTe-SnTe quasi binary phase diagram and confirmed the existence of ternary phase Ga 6 SnTe 10 using thermal analysis.…”

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

“…Moreover, they have determined the Ga 2 Te 3 -SnTe and GaTe-SnTe quasi binary phase diagram and confirmed the existence of ternary phase Ga 6 SnTe 10 using thermal analysis. The existence of ternary compounds Ga 2 SnTe 3 and GaSnTe 2 are still controversial [86]. Therefore, ternary compound Ga 6 SnTe 10 was only considered in the present calculation.…”

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

“…The Gibbs energy of the compound was estimated using the Neumann-Kopp rule with the slight modification of excess enthalpy term for best fitting the phase diagram in the quasi-binary Ga 2 Te 3 -SnTe. The liquidus line is measured by [87,89] for GaTe-SnTe and by [86,89] for Ga 2 Te 3 -SnTe.…”

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

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Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model

Kumar

Paliwal

Tiwary

et al. 2021

Metals

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Thermoelectric (TE) materials are of great interest to many researchers because they directly convert electric and thermal energy in a solid state. Various materials such as chalcogenides, clathrates, skutterudites, eutectic alloys, and intermetallic alloys have been explored for TE applications. The Ga-Sn-Te system exhibits promising potential as an alternative to the lead telluride (PbTe) based alloys, which are harmful to environments because of Pb toxicity. Therefore, in this study, thermodynamic optimization and critical evaluation of binary Ga-Sn, binary Sn-Te, and ternary Ga-Sn-Te systems have been carried out over the whole composition range from room temperature to above liquidus temperature using the CALPHAD method. It is observed that Sn-Te and Ga-Te liquids show the strong negative deviation from the ideal solution behavior. In contrast, the Ga-Sn liquid solution has a positive mixing enthalpy. These different thermodynamic properties of liquid solution were explicitly described using Modified Quasichemical Model (MQM) in the pair approximation. The asymmetry of ternary liquid solution in the Ga-Sn-Te system was considered by adopting the toop-like interpolation method based on the intrinsic property of each binary. The solid phase of SnTe was optimized using Compound Energy Formalism (CEF) to explain the high temperature homogeneity range, whereas solid solution, Body-Centered Tetragonal (BCT) was optimized using a regular solution model. Thermodynamic properties and phase diagram in the Ga-Sn-Te and its sub-systems were reproduced successfully by the optimized model parameters. Using the developed database, we also suggested several ternary eutectic compositions for designing TE alloy with improved properties.

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Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

Section: Ga-sn-te Ternary Systemmentioning

confidence: 99%

See 3 more Smart Citations

Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model

Kumar

Paliwal

Tiwary

et al. 2021

Metals

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Layered GaGe₂Te: structure and chemical bonding

Juhlke¹,

Steinberg

Staab³

et al. 2023

Zeitschrift anorg allge chemie

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The structure of the new compound GaGe2Te has been determined using nanofocused synchrotron radiation. The trigonal structure (space group P m1, a=4.0443(3) Å, c=14.923(2) Å, V=211.38(4) Å3; Z=2) consists of Ge bilayers sandwiched by Ga−Te layers. Ge and Ga are tetrahedrally coordinated. The layer packages are separated by a van der Waals gap with a Te−Te distance of 4.1502(7) Å. The structure resembles that of GaGeTe but features an additional Ge atom layer. Despite small scattering contrast of Ga and Ge, precise high‐resolution data enable unequivocal atom assignment as confirmed by R values of different models. DFT calculations suggest only a small extent of charge transfer, which is confirmed by both Bader and Mulliken charges. Thus, bonding within the layer packages is predominantly covalent, especially between Ga and Ge. Formal oxidation states according to GaIIIGe(0)Ge−ITe−II, i. e. assuming rather ionic Ge−Ga bonds, convey a much less realistic situation than GaIIGe2(0)Te−II, which is in line with GaGeTe.

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Synthesis of new Ga7Ge3Te11—One-dimensional phase in Ga–Ge–Te ternary system: Crystal structure and physical properties

Drašar¹,

Císařová²,

Kucek³

et al. 2015

Journal of Solid State Chemistry

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The excess enthalpies of liquid GaGeTe and GaSnTe alloys

Cited by 7 publications

References 10 publications

Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model

Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model

Layered GaGe₂Te: structure and chemical bonding

Synthesis of new Ga7Ge3Te11—One-dimensional phase in Ga–Ge–Te ternary system: Crystal structure and physical properties

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The excess enthalpies of liquid GaGeTe and GaSnTe alloys

Cited by 7 publications

References 10 publications

Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model

Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model

Layered GaGe2Te: structure and chemical bonding

Synthesis of new Ga7Ge3Te11—One-dimensional phase in Ga–Ge–Te ternary system: Crystal structure and physical properties

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Product

Resources

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Layered GaGe₂Te: structure and chemical bonding