2015
DOI: 10.1016/j.optcom.2014.08.034
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The fabrication and characteristic investigation of microstructured silicon with different spike heights

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Cited by 11 publications
(2 citation statements)
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“…The surface microstructures can trap the light by multiple reflections on the textured surface, which results in an absorption enhancement. The other factor is the S ion hyperdoped by fs-laser irradiation in SF 6 ambient [ 5 , 6 ]. The hyperdoping introduces some intermediate bands near the conductance band into the Si bandgap [ 10 ], which contributes to below-bandgap absorption and consequently enhances the absorption of black Si in the NIR region.…”
Section: Resultsmentioning
confidence: 99%
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“…The surface microstructures can trap the light by multiple reflections on the textured surface, which results in an absorption enhancement. The other factor is the S ion hyperdoped by fs-laser irradiation in SF 6 ambient [ 5 , 6 ]. The hyperdoping introduces some intermediate bands near the conductance band into the Si bandgap [ 10 ], which contributes to below-bandgap absorption and consequently enhances the absorption of black Si in the NIR region.…”
Section: Resultsmentioning
confidence: 99%
“…This will extend the photoresponse of Si-based optoelectronic devices into the NIR region (>1100 nm) [ 1 4 ]. Recently, a type of Si named “black Si” fabricated by femtosecond (fs)-laser irradiation method has been reported [ 5 , 6 ]. Black Si exhibits a very high absorption in not only the visible but also the NIR region extending to 2.5 μm because of the special surface microstructure and chalcogen hyperdoping induced by fs-laser processing.…”
Section: Introductionmentioning
confidence: 99%