A black silicon structure with high-aspect-ratio surface spikes was designed and fabricated in vacuum, resulting in absorptance >90% over the range of 200–2500 nm. It is demonstrated that annealing, an essential step in the fabrication of semiconductor devices, has almost no effect on the infrared absorption of this material, while the infrared absorption of an identical structure fabricated in a SF6 drops dramatically after the annealing process. The characteristic of high infrared absorption and annealing-insensitivity is attributed to both the high-aspect-ratio structure and the phosphor-doped low impedance silicon. These results are important for the fabrication of highly efficient optoelectronic devices.

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Microstructured silicon material, fabricated by femtosecond laser pulses, has a lot of crucial applications in silicon-based photovoltaics, photo-detectors, and super-hydrophobic devices etc., due mainly to the high absorption in both visible and infrared regions. However, the mechanisms attributed to its high-absorption characteristics have never been accurately quantified, which limits further the exploitation of this kind of material. Here, we experimentally quantify different absorption contributions in microstructured silicon fabricated by femtosecond laser pulses, which can be attributed to dopant impurities in the silicon substrate, doping impurities induced during the laser fabrication process, absorption enhancement from the light-trapping structure, and surface disordered material formed also during the laser fabrication process. From these analyses, we determine that with the assist of a light-trapping structure, dopant impurities in the silicon substrate contribute much more to the infrared absorption than those of the doping sulfur impurities induced during the fabrication process. Furthermore, the infrared absorption of material can be annealing-insensitive. These results have important implications for the design and fabrication of high-efficiency optoelectronic devices.

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