The fabrication of GaN-based nanopillar light-emitting diodes

Zhu, Jun; Wang, Liangji; Zhang, Shuming; Wang, Hui; Zhao, Degang; Zhu, Jinlong; Liu, Zongshun; Jiang, Desheng; Yang, Hui

doi:10.1063/1.3488905

Cited by 35 publications

(21 citation statements)

References 14 publications

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“…Usually adopted ICP etching method as a top-down approach for micro/nano-rods would inevitably cause massive damage to material. 15 In this article, N-polar GaN efficiency (IQE), and transmission electron microscope (TEM) further reveals its quasi-perfect crystalline quality clearly. The work in this article presents a detail investigation into N-polar GaN etching and an approach for quasi-perfect l-HP VLEDs array fabrication.…”

Section: Introductionmentioning

confidence: 97%

“…Much progress has been achieved in this area. [12][13][14][15] However, the ELOG method and the current available methods for MNSs have their own limitations. The control of GaN growth and the p-doping remains a challenge when using the self-assembled method, 12 catalyst-driven method, 13 and selective-area growth techniques, 14 also contamination and need for patterning adds to its inconvenience.…”

Section: Introductionmentioning

confidence: 99%

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N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Wang¹,

Ma²,

Liu³

et al. 2013

Journal of Applied Physics

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N-polar GaN etching process and mechanism has been investigated in detail by varying the etching parameter (etchant temperature, etchant concentration, and etching duration) in KOH and H3PO4. Quasi-perfect micro-scale hexagonal pyramids vertical light emitting diodes (μ-HP VLEDs) array with least active area loss (<12%) has been fabricated by N-polar etching. The μ-HP VLEDs shows massively improved crystal quality with X-ray diffraction full width at half maxima decreased from 442 s to 273 s, and the room temperature minority carriers decay time increased from 252 ps to 747 ps. Temperature dependence of photoluminescence result reveals a ∼30% improved internal quantum efficiency, and transmission electron microscope further reveals its quasi-perfect crystalline quality clearly.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Wang¹,

Ma²,

Liu³

et al. 2013

Journal of Applied Physics

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“…A more moderate increase in PL efficiency of nanopillar structures produced by dry etching was observed in Ref. 6 after etching in HCl. The effect was ascribed to suppression of radiation defects produced by low energy ions bombardment during dry etching.…”

Section: Introductionmentioning

confidence: 75%

Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

Polyakov

Jeon

Smirnov

et al. 2012

Journal of Applied Physics

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Electrical properties, microcathodoluminescence spectra, and spectra of deep traps were studied for nanopillar structures prepared by dry etching of undoped GaN films using natural masks formed by Ni nanoparticles. It is shown that as-prepared nanopillar structures have low bandedge intensity, very high leakage current of Schottky diodes, their electrical properties are determined by 0.2 eV electron traps or, after etching in aqua regia, 0.14 eV electron traps that are commonly associated with radiation defects. Deep levels transient spectroscopy spectra measured after aqua regia etching are dominated by 1 eV electron traps, other common radiation defects. Annealing at 600 °C is instrumental in eliminating the 0.2 eV and 0.14 eV electron traps, but not the 1 eV traps. A higher temperature annealing at 900 °C is required for strongly suppressing the latter and increasing the bandedge luminescence peak magnitude by 2 times compared to control sample. The best results in terms of luminescence efficiency increase are produced by additional etching in aqueous solution of KOH, but subsequent etching in aqua regia is necessary to suppress excessive surface leakage due to surface contamination by the KOH treatment.

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“…The smaller nanopillar size corresponds to a larger blue shift of the emission peak which suggests a larger strain relaxation. In addition, the decrease of FWHM is attributed to the reduction of potential tilt in the MQWs thanks to the strain relaxation [19].…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…Such a large surface area for small nanopillar samples could lead to a more severe surface damage and limit the IQE enhancement. Therefore, it is worth mentioning that a surface passivation process, as we applied in this work, is essential to cure the surface damage and suppress the related nonradiative recombination process [19,27,28].…”

Section: Experiments and Resultsmentioning

confidence: 99%

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Iida

Liu

et al. 2017

Nanophotonics

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Abstract:We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and timeresolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

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The fabrication of GaN-based nanopillar light-emitting diodes

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Cited by 35 publications

References 14 publications

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

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