1991
DOI: 10.1116/1.585285
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The fabrication of metal–oxide–semiconductor transistors using cerium dioxide as a gate oxide material

Abstract: This section is intended for the publication of (l) brief reports which do not require the forma! structure of regular journal articles, and (2j comments on items previously published in the journal.

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Cited by 29 publications
(14 citation statements)
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“…For instance, ceria is discussed as advanced insulating layer material in metaloxide-semiconductor (MOS) devices since ceria exhibits a high dielectric constant (%26) so that leakage currents can be suppressed keeping the switching capabilities necessary for devices of high performance. 1 Here, ceria has also the advantage of very small lattice mismatch (0.35%) with respect to Si(111). [2][3][4] Thus, it is expected that high quality ceria films with negligible defects (e.g., oxygen vacancies) are well suited for high performance devices.…”
mentioning
confidence: 99%
“…For instance, ceria is discussed as advanced insulating layer material in metaloxide-semiconductor (MOS) devices since ceria exhibits a high dielectric constant (%26) so that leakage currents can be suppressed keeping the switching capabilities necessary for devices of high performance. 1 Here, ceria has also the advantage of very small lattice mismatch (0.35%) with respect to Si(111). [2][3][4] Thus, it is expected that high quality ceria films with negligible defects (e.g., oxygen vacancies) are well suited for high performance devices.…”
mentioning
confidence: 99%
“…It has been shown that an SiO x layer ͑see Fig. 1͒ can form between the Si and the CeO 2 , and further that the CeO 2 can sometimes be reduced to CeO 2Ϫx in the presence of Si. 5 These effects are strongly dependent on temperature, oxygen partial pressure, and other growth conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Cerium oxide has shown potential as a heterostructure material for Si, 1 as a gate dielectric for a Si metal-oxide semiconductor field-effect transistor, 2 as an alternative to ferroelectric materials in nonvolatile capacitor memories, 3 and as an alternative to the standard SiO 2 -based silicon on insulator technology. 4 In all of these applications a critical issue is the nature of the Si-CeO 2 interface.…”
Section: Introductionmentioning
confidence: 99%
“…Cerium oxide simultaneously reduces HC, soot and NOx emissions, in the diesel engine exhaust, because of this peculiar ability of transformation. Cerium oxide has lot of applications, which includes heterogeneous catalysis in automotive exhaust gas conversion, solid oxide fuel cells (SOFC's) [13][14][15][16] and recently in biomedicine for applications in spinal cord repair and other diseases of the central nervous system [17]. Cerium (IV) oxide (CeO 2 ) or Ceria can be used as a fuel additive as it is stable up to 2400°C.…”
Section: Introductionmentioning
confidence: 99%