The fate of the 2√3 × 2√3<i>R</i>(30°) silicene phase on Ag(111)

Liu, Zhilong; Wang, Meixiao; Liu, Canhua; Jia, Jin‐Feng; Vogt, Patrick; Quaresima, C.; Ottaviani, Carlo; Olivieri, Bruno; Padova, Paola De; Lay, G. Le

doi:10.1063/1.4894871

Cited by 41 publications

(53 citation statements)

References 22 publications

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“…S1(a), at 320 °C a nearly complete monolayer of the superstructure initially forms, consistent with the previous reports93134. It is worth noting that is not a highly ordered phase, rendering assignment of the atomic structure challenging103536. Recently, a universal model has been proposed to explain the variety of structures that have been reported thus far14.…”

Section: Resultssupporting

confidence: 87%

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Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Feng

Wagner

Zhang

2015

Sci Rep

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Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelastic inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown phase is identical to that of the R30° reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. These findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.

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Section: Resultssupporting

confidence: 87%

“…Thus far, freestanding silicene has not been synthesized. Most of the silicene structures were grown on Ag surfaces89101112131415161718, with a few successes on ZrB 2 19 and Ir20. Yet, interaction with the substrate may render it rather difficult to probe the intrinsic properties of silicene21222324.…”

mentioning

confidence: 99%

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Feng

Wagner

Zhang

2015

Sci Rep

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“…Finally, we discuss the mysterious 2 3 × 2 3 silicene based on our results, though there is now some uncertainty and debate on this phase [66][67]. The concentration of Si-SW defects in 2 3 × 2 3 and 13 × 13 silicene are in the same order of magnitude, thus it is also hard to find Si-SW defects in 2 3 × 2 3 silicene.…”

Section: Formation Energies and Concentrations Of Defectsmentioning

confidence: 96%

Point defects in epitaxial silicene on Ag(111) surfaces

Liu

Feng

et al. 2016

2D Mater.

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Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of ~100 cm2 V−1 s−1, however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of $\sqrt{13}\times \sqrt{13}$ and $2\sqrt{3}\times 2\sqrt{3}$ silicene in experiments is revealed, and 4 x 4 silicene sheet is thought to be the most suitable structure for future device applications. , however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of 13 × 13 and 2 3 ×2 3 silicene in experiments is revealed, and 4×4 silicene sheet is thought to be the most suitable structure for future device applications. Disciplines Engineering | Physical Sciences and Mathematics2

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“…in 2010 . Silicene has been synthesized not only on Ag, but also on several other substrates such as ZrB 2 , and Ir . Ag(111) is reported to be the more suitable substrate due to its weak chemical interaction with Si which prohibits alloy formation.…”

Section: Synthesis Structure and Propertymentioning

confidence: 99%

2D Elemental Nanomaterials Beyond Graphene

2019

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Graphene is a well‐known 2D material with potential applications. In recent years, 2D materials of other elements have come to the fore. These are borophene in group III, silicene, germanene and stanene in group IV and phosphorene, arsenene, antimonene and bismuthene in group V. In this article, we discuss the synthesis, structure and properties of the elemental 2D materials beyond graphene. Of the various elemental 2D materials, borophene, silicene and phosphorene are interesting in terms of stability and properties leading to possible applications. We have described potential applications of other 2D materials as well.

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The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Cited by 41 publications

References 22 publications

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Point defects in epitaxial silicene on Ag(111) surfaces

2D Elemental Nanomaterials Beyond Graphene

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