The Features of GaAs and GaP Semiconductor Cathodes 
in an Infrared Converter System

Kurt, H. Hilal; Tanrıverdi, Evrim

doi:10.1007/s11664-017-5539-0

Cited by 12 publications

(9 citation statements)

References 30 publications

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“…Electrons have different energies in the plasma. Different plasma chemical process takes a role in a plasma device and each of them is strongly related to electron energy distribution [16,17]. The average energy distribution of the electrons in plasma depends on the electric field which sustains the plasma [15].…”

Section: Plasma System Theoretical Resultsmentioning

confidence: 99%

“…The ion mobility is much lower than electron mobility in plasma. Therefore, the plasma formation and electric field movements are generally governed by electron migration flux [16,17,18].…”

Section: Plasma System Theoretical Resultsmentioning

confidence: 99%

“…Heterostructures and devices are grown commercially, and these composite structures have strong absorption in emission energy for device applications [16,17,18]. To verify the efficacy of binary compound materials for the plasma transport mechanism, the InGaAs/InP detector is chosen as a cathode material.…”

Section: Discussionmentioning

confidence: 99%

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The features of the InGaAs/InP detectors in plasma converter systems

Kurt

UTAŞ

2022

Journal of Energy Systems

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The features of the plasma cell with the InGaAs/InP detector are explored. The detector is composed of InGaAs and InP wafers. Mean electron energies, migrative electron flux and current densities are evaluated by theoretical simulation analyses. The results helped to understand the uncertain plasma parameters and made the plasma structure more understandable, thereby, the complex plasma reactions can be solved via the COMSOL package. New plasma studies have focused on uniform discharges. However, the optimization of the plasma structure should be ascertained in order to explain the complex physical and chemical features in the complicated media having different discharge mechanisms. The non-thermal plasmas are famous especially for the microelectronic systems and surface processes such as etching and purification.

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Section: Plasma System Theoretical Resultsmentioning

confidence: 99%

“…The ion mobility is much lower than electron mobility in plasma. Therefore, the plasma formation and electric field movements are generally governed by electron migration flux [16,17,18].…”

Section: Plasma System Theoretical Resultsmentioning

confidence: 99%

See 1 more Smart Citation

The features of the InGaAs/InP detectors in plasma converter systems

Kurt

UTAŞ

2022

Journal of Energy Systems

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“…The technological importance and the need of study of Gallium arsenide (GaAs) in the last few years are due to its high melting point at 1238°C along with a density of 5.3176 g/cm3. It is obtained as a by-product from the extraction of ores of zinc and aluminum and is present at 5-15 mg/Kg in Earth's crust [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Given this wide use of GaAs, the idea came to write this chapter focusing on the physical and chemical properties of this important material. While excluding the impurities present and their associated effects, the focus is on the characteristics of GaAs [7,8].…”

Section: Introductionmentioning

confidence: 99%