The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics

Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

“…According to previous research reports, the FE fatigue and degradation are dominated by (i) the m-phase increment, (ii) breakdown, and/or (iii) dipole pinning, as shown in Fig. 5(a) [1], [3], [4], [11], [12], [13], [14], [15], [16]. Three fatigue mechanisms are discussed for AFE and validated by experimental measurements as follows.…”

“…6(a) and (b), which indicates an ignorable increment for the m-phase. For (ii) breakdown, the dipole switching becomes invalid within a domain due to filament-base breakdown [3], [14]. Fig.…”

“…stress-induced leakage current (SILC), which are dominated by oxygen vacancy (VO) disturbances [1], [2]. Recently, several techniques have been reported that redistribute VO for the recovery of FE characteristics to extend the switching cycle number in FeRAM [3], [4], [5]. The wake-up and fatigue mechanism model for most publications is illustrated in Fig.…”

“…The wake-up and fatigue mechanism model for most publications is illustrated in Fig. 1(a) [3], [4], in which the magnitude of the VO location plays an important role in low electric field (E-field) cycling. Subsequently, the redistribution of VO can be performed by high E-field stimulation to achieve recovery from domain pinning [3], [4].…”

“…1(a) [3], [4], in which the magnitude of the VO location plays an important role in low electric field (E-field) cycling. Subsequently, the redistribution of VO can be performed by high E-field stimulation to achieve recovery from domain pinning [3], [4]. For antiferroelectric (AFE) materials, a faster dipole switching speed and robust endurance have been reported compared with FE materials [6], [7].…”