The formation of antimony oxychloride in flame retardant mixtures and its influence on flame retardant efficiency

Богданова, В. В.; Fedeev, S.S.; Лесникович, А. И.; Klimovtsova, I. A.; Свиридов, В. В.

doi:10.1016/0141-3910(85)90044-8

Cited by 7 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7,9,41 Although there are no data for indium oxychloride, oxygen removal via formation of volatile antimony oxychloride is unlikely. SbOCl was detected in the solid-phase products of the reaction between Sb 2 O 3 and chlorinated flame retardants, such as chlorinated paraffin (C 27 H 31 Cl 25 ) and DielsÀAlder adduct (C 15 H 6 Cl 12 ) at 473À773 K. 42 43 If formed, the stability and thermal decomposition of SbOCl would have prevented the removal of O atoms from the InSb native oxide surface in our experiments.…”

Section: ' Results and Discussionmentioning

confidence: 69%

“…Titanium hydroxychlorides were proposed as short-lived intermediates formed when TiCl 4 reacted with hydroxyl-terminated SiO 2 as well as with native oxides on GaAs(100). ,, Although there are no data for indium oxychloride, oxygen removal via formation of volatile antimony oxychloride is unlikely. SbOCl was detected in the solid-phase products of the reaction between Sb 2 O 3 and chlorinated flame retardants, such as chlorinated paraffin (C 27 H 31 Cl 25 ) and Diels–Alder adduct (C 15 H 6 Cl 12 ) at 473–773 K . Pitt et al reported that SbOCl decomposed stepwise into Sb 4 O 5 Cl 2 at 518 K, Sb 3 O 4 Cl at 683 K, and Sb 2 O 3 at 748 K, evolving gaseous SbCl 3 .…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Oxide Removal and Selective Etching of In from InSb(100) with TiCl₄

2011

View full text Add to dashboard Cite

The reaction of TiCl 4 with a native oxide-covered InSb(100) film grown epitaxially on GaAs(100) was investigated using X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. At room temperature and low pressure (∼3 Â 10 À7 Torr), TiCl 4 reacted with In and Sb oxides, producing a stable indium chloride overlayer and removing a small amount of Sb, likely as SbCl 3 , after a subsequent vacuum annealing step at 500 K. About 25% of the O was removed, likely as TiOCl 2 , and a submonolayer of TiO 2 was deposited, which competed with oxide etching. When TiCl 4 was dosed with the substrate temperature maintained at 470À560 K, the etching reaction prevailed, resulting in complete removal of the native oxide without depositing TiO 2 . Heating alone could not account for the results because the oxide desorption onset was 550 K and some oxide was present even after annealing in vacuum to 650 K. TiCl 4 exposure at elevated temperatures not only removed the native oxide but also preferentially etched substrate In atoms by forming volatile indium chlorides. Residual indium chlorides remained on the surface in the 470À530 K range but were completely removed at 500À560 K. The depletion of In from the surface promoted the out-diffusion of In from the substrate, allowing bulk etching and accumulation of at least a 72 Å thick Sb layer. Accumulation of Sb on the surface is consistent with a higher kinetic barrier for chlorination of Sb compared to In. The atomic ratio of Ti to Sb in elemental states was 0.43À0.46, suggesting TiSb 2 alloy formation. Surface height modulations on the order of 100 nm and the presence of pits and grain boundaries were observed.

show abstract

Section: ' Results and Discussionmentioning

confidence: 69%