The formation of low-dimensional structures by compressive plasma flows

Углов, В.В.; Анищик, В. М.; Cherenda, N.N.; Sveshnikov, Yu. V.; Astashynski, V. M.; Kostyukevich, E. A.; Kuzmitski, A. M.; Askerko, V.V.; Thorwath, G.; Stritzker, B.; Квасов, Н. Т.; Danilyuk, L.A.

doi:10.1016/j.surfcoat.2005.02.007

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…One can see that the energy transfer from the capacitor bank to the discharge is terminated at the end of the first current half-period (∼70µs). There are three main direction and application in surface modification of material by CPFs which can be marked out as following: (i) Direct treatment of materials [23][24][25][26], (ii) Mixing of a "coating-substrate" system [19,[27][28][29][30], (iii) Thin film deposition and surface layer alloying by an additional component (e.g., powder) injected into the plasma flow [31][32][33].Plasma beams impinging on solid targets transfer their kinetic energy into both electronic and lattice excitations. Beam energy is converted quickly into atomic motion.…”

Section: Figure 1 (A) Mpc Device and Its Electrods (Anode As 8 Rods mentioning

confidence: 99%

Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

Sari¹

2014

IJMSA

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Abstract:The interaction of a dense compressed nitrogen plasma flow with a system of Ta-Ti layers on a silicon substrate has been investigated. This plasma flow was generated in a quasi-stationary pulsed plasma accelerator that can provide a supersonic high energy plasma flux. The plasma pulse duration, discharge current, concentration, and energy densities absorbed by the target were 100 µs, 80 kA, 10 18 cm −3 , and 3-13 J/cm 2 respectively. The samples were exposed to a single plasma pulseor to a series of pulses and were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive X-ray analyses. The result showed that the changes in the elemental and structure phase compositions depends on energy and number of plasma pulses. Formation of Ti 5 Si 3 and Ta 2 N, are the main results of the current research.

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Section: Figure 1 (A) Mpc Device and Its Electrods (Anode As 8 Rods mentioning

confidence: 99%

Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

Sari¹

2014

IJMSA

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“…CPF action on single crystalline silicon samples forms highly oriented periodic submicron cylindrical shaped surface structures [7][8][9][10][11][12]. MPC plasma flow deposition of nanostructured coatings on a target surface was obtained recently [13]. Hardening and surface layer modification of carbon steel exposed to CPF was presented [14].…”

Section: Introductionmentioning

confidence: 99%

Optimization of plasma flow parameters of the magnetoplasma compressor

Dojčinović

Kuraica

Obradovć

et al. 2006

Plasma Sources Sci. Technol.

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Optimization of the working conditions of the magnetoplasma compressor (MPC) has been performed through analysing discharge and compression plasma flow parameters in hydrogen, nitrogen and argon at different pressures. Energy conversion rate, volt-ampere curve exponent and plasma flow velocities have been studied to optimize the efficiency of energy transfer from the supply source to the plasma. It has been found that the most effective energy transfer from the supply to the plasma is in hydrogen as a working gas at 1000 Pa pressure. It was found that the accelerating regime exists for hydrogen up to 3000 Pa pressures, in nitrogen up to 2000 Pa and in argon up to 1000 Pa pressure. At higher pressures MPC in all the gases works in the decelerating regime. At pressures lower than 200 Pa, high cathode erosion is observed. MPC plasma flow parameter optimization is very important because this plasma accelerating system may be of special interest for solid surface modification and other technology applications.

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The formation of low-dimensional structures by compressive plasma flows

Cited by 2 publications

References 10 publications

Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

Optimization of plasma flow parameters of the magnetoplasma compressor

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