The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Shen, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

doi:10.1016/j.apsusc.2016.09.165

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…Furthermore, the bottle-neck of p-doped ZnO has seriously impeded its desired application in short-wavelength optoelectronics 2 , especially as ultraviolet (UV) laser diodes 3 . Therefore, ZnO/GaN heterojunctions have been designed and the various layers have been introduced as the electron barrier layers, such as Ga 2 O 3 4 , ZnS 5 , MgO 6,7 , Al 1-x Ga x N 3 , AlN 8,9 , HfO 2 10 , MgF 11 , Al 2 O 3 12 , NiO 13 and In 0.17 Al 0.83 N 14 . In these reports, the turn-on voltages have been elevated by increasing the thickness of electron barrier layers.…”

Section: Introductionmentioning

confidence: 99%

“…In these reports, the turn-on voltages have been elevated by increasing the thickness of electron barrier layers. It is expected to suppress the interface emission through insertion of a proper buffer layer with certain thickness (≥ 20 nm) for controlling the tunneling electrons or holes 12,13,15 . In these situations, the UV emission of p-type GaN 16,17 and interface emission were both reduced.…”

Section: Introductionmentioning

confidence: 99%

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Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Liu¹,

Li²,

Wang³

et al. 2021

OEA

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Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge. However, the dynamics for carrier tunneling to control the interface emission is still a mystery. Herein, the low-refractive HfO 2 with a proper energy band configuration is employed as the buffer layer in achieving ZnO-microwire/HfO 2 /GaN heterojunctional light-emitting diodes (LEDs). The optically pumped lasing threshold and lifetime of the ZnO microwire are reduced with the introduced HfO 2 layer. As a result, the interface emission is of blue-shift from visible wavelengths to 394 nm whereas the ultraviolet (UV) emission is enhanced. To regulate the interface recombination between electrons in the conduction band of ZnO and holes in the valence band of GaN, the tunneling electrons with higher conduction band are employed to produce a higher tunneling current through regulation of thin HfO 2 film causing blue shift and interface emission enhancement. Our results provide a method to control the tunneling electrons in heterojunction for high-performance LEDs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Liu¹,

Li²,

Wang³

et al. 2021

OEA

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“…The details can be found in our previous work. [28][29][30][31][32][33][34] Ag NPs were prepared by hydrothermal synthesis. Firstly, 34 mg of AgNO 3 was added into 50 ml of ethylene glycol (EG).…”

mentioning

confidence: 99%

Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes

Wang

Bai

Zhang

et al. 2018

Appl. Phys. Express

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Ag nanoparticles (NPs) were used to demonstrate the surface-plasmon-resonance (SPR)-enhanced electroluminescence (EL) from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs). Ag NPs were synthesized with an average diameter of 30 nm, which was well matched to the optimal calculation result obtained by the finite difference time domain (FDTD) method. The photoluminescence intensities from the top excitation of GaN and ZnO were 70 and 40% enhanced by coupling Ag NPs, respectively. The EL intensity was increased 20% by lighting the semipolar n-ZnO/p-GaN heterojunction LEDs coupled with Ag NPs.

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Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

Yue,

Zhang,

Zhao

et al. 2024

Journal of Alloys and Compounds

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The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

Cited by 9 publications

References 27 publications

Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes

Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

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