The Function of the Materials Science in Industrial Design

Shen, Hua; Wei, Li

doi:10.4028/www.scientific.net/amr.798-799.357

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2013

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“…For all ICs, handheld electronic products, LCDs, notebooks and other products are required to pass ESD/EMI test specifications. Therefore, the electrostatic discharge (ESD) reliability has become increasingly important [1][2][3][4][5][6][7]. Moreover, ESD events affect the reliability of ICs appeared to be increasingly serious and may result in a low yield of electronic products which causes huge losses.…”

Section: Introductionmentioning

confidence: 99%

Impact of Drain-Side nWell Engineering on ESD Robustness in 0.35μm LV MOSTs

Chen

Lee

2013

AMR

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A multi-finger nMOST is widely used as an electrostatic discharge (ESD) protection device especially in the input/output pads. However, the contact-spiking leakage phenomenon in an MOST are seriously impacted the ESD capability. Therefore, one drain-side engineering is investigated in this paper, i.e., by adding a negative-type well (nWell) structure in the drain-side of device, hoping to avoid contact-spiking issues to enhance ESD reliability. The nWell width variations will be explored the influence on snapback parameters of ESD devices in a 0.35μm 3.3V low voltage (LV) process. However, after a systematic analysis, it is found that adding an nWell structure in the drain-side will lower ESD capability (It2 value) about 24% for this process. And, as compared with the original reference DUT, adding any nWell in the drain-side will make the Vh value slightly decreasing about 1%.

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