The fundamental optical absorption edge of TlGaS<sub>2x</sub>Se<sub>2(1−x)</sub> solid solutions

Bakhyshov, A. E.; Boules, Safuat; Faradzhov, F. E.; Mamedov, M. Sh.; Tagirov, V. I.

doi:10.1002/pssb.2220950246

Cited by 23 publications

(13 citation statements)

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“…These values are in agreement with the band gap of TlGa(S x Se 1−x ) 2 crystals deduced from the optical absorption measurement [1]. The direct allowed transition for TlGaSe 2 and TlGaS 2 compound were reported as 2.23 and 2.53 eV at room temperature [12,26]. The broadening and asymmetrical band of PC spectrum can be ascribed by the presence of structural defects and impurities introduced with changing of composition x, which results in broadening of PC spectrum from lower to higher wavelength regions.…”

Section: Resultssupporting

confidence: 80%

Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Karabulut

Parlak

Mamedov

2007

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 80%

Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Karabulut

Parlak

Mamedov

2007

Journal of Alloys and Compounds

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“…In view of its possible applications in optoelectronic devices in the visible range, a great deal of attention has been devoted to the study of the structural [3][4][5], electrical [6] and photoelectrical properties [7]. Optical absorption (OA) spectra in the region of fundamental absorption [2,8,9], Raman studies and infrared reflection (IR) spectra [3,10,11] have also been reported. The discovery of low temperature PT [12] and influence of hydrostatic pressure on the band edge absorption [13], excitonic luminescence [14] and low temperature photoluminescence (PL) [15] greatly enhanced the interest in the physical properties of this crystal.…”

Section: Introductionmentioning

confidence: 99%

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Abay

Güder

Efeoǧlu

et al. 2001

phys. stat. sol. (b)

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The dependence of the absorption coefficient on the photon energy and sample temperature near the fundamental absorption edge (AE) was investigated for TlGaS 2 layered semiconductor crystals. The exponential absorption tails observed in the 10-340 K temperature range were interpreted as Urbach-Martienssen (U-M) tails. From the analysis of these tails, characteristic Urbach parameters were determined. The results lead to the conclusion that the temperature dependence of the absorption tails near the fundamental AE of TlGaS 2 is the result of thermal disorder.

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“…Large crystals of TlGaSe 2 were grown using the Bridgman method [4]. The compound crystalizes in a monoclinic lattice (space group C2/c) with the parameters a b 7.771 Ð, c 15.636 Ð, b 100.06, z 16 density r 6.42 g/cm 3 [5] or in a tetragonal lattice with the parameters; a b 7.644 Ð, c 30.832 Ð, b 100.07 and z 16 [6].…”

Section: Introductionmentioning

confidence: 99%

The Optical Absorption Edge of p-Type Tl_(1-x)GaPr_xSe₂and TlGaSe₂

Gürbulak¹

1999

Phys. Scr.

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p-TlGaSe 2 and Tl (1-x) , GaPr x Se 2 single crystals were grown by the modi¢ed Bridgman-Stockbarger method. The absorption measurements were carried out in p-TlGaSe 2 and TI (1-x) GaPr x Se 2 samples in temperature range 10^320 K with a step of 10 K. The phonon energies calculated for p-TlGaSe 2 , p-TI 0.999 GaPr 0.001 Se 2 and p-Tl 0.995 GaPr 0.005 Se 2 are 34.0 meV, 30.0 meV and 35.0 meV, respectively. At 300 K, the direct band gaps of p-TlGaSe 2 , p-Tl 0.999 GaPr 0.001 Se 2 and p-Tl 0.995 GaPr 0.005 Se 2 are 2.165 eV, 2.164 eVand 2.155 eV and the indirect band gaps are 2.110 eV, 2.122 eV and 2.128 eV, respectively. There is an abrupt change in the direct energy peak for p-TlGaSe 2 in the temperature ranges 230-250 K, for p-Tl 0.999 GaPr 0.001 Se 2 and p-Tl 0.995 GaPr 0.005 Se 2 in the temperature ranges 195-215 K. On the other hand, indirect energy peaks for p-Tl 0.999 GaPr 0.001 Se 2 and Tl 0.995 GaPr 0.005 Se 2 are in the temperature ranges 215-235 K.

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The fundamental optical absorption edge of TlGaS_2xSe_2(1−x) solid solutions

Cited by 23 publications

References 1 publication

Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

The Optical Absorption Edge of p-Type Tl_(1-x)GaPr_xSe₂and TlGaSe₂

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The fundamental optical absorption edge of TlGaS2xSe2(1−x) solid solutions

Cited by 23 publications

References 1 publication

Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Structural and electrical properties of TlGa(SxSe1−x)2 mixed crystals

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

The Optical Absorption Edge of p-Type Tl(1-x)GaPrxSe2and TlGaSe2

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The fundamental optical absorption edge of TlGaS_2xSe_2(1−x) solid solutions

The Optical Absorption Edge of p-Type Tl_(1-x)GaPr_xSe₂and TlGaSe₂