The Ge(001) surface

Zandvliet, Henricus J.W.

doi:10.1016/j.physrep.2003.09.001

Cited by 222 publications

(237 citation statements)

References 127 publications

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“…The samples were mounted on Mo holders and contact of the samples with any other metal has been carefully avoided during the preparation. An atomically clean Ge(001) substrate was obtained by several cycles of prolonged 800 eV Ar þ ion sputtering, followed by annealing the sample through resistive heating at 1,100 ( ± 25) K 42 . The clean samples exhibited a well-ordered (2 Â 1)/c(4 Â 2) domain pattern (see Fig.…”

Section: Discussionmentioning

confidence: 99%

Electronically stabilized nanowire growth

et al. 2013

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Metallic nanowires show unique physical properties owing to their one-dimensional nature. Many of these unique properties are intimately related to electron-electron interactions, which have a much more prominent role in one dimension than in two or three dimensions. Here we report the direct visualization of quantum size effects responsible for preferred lengths of self-assembled metallic iridium nanowires grown on a germanium (001) surface. The nanowire length distribution shows a strong preference for nanowire lengths that are an integer multiple of 4.8 nm. Spatially resolved scanning tunneling spectroscopic measurements reveal the presence of electron standing waves patterns in the nanowires. These standing waves are caused by conduction electrons, that is the electrons near the Fermi level, which are scattered at the ends of the nanowire.

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Section: Discussionmentioning

confidence: 99%

Electronically stabilized nanowire growth

et al. 2013

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“…The Ge(100) surface atoms form dimers exhibiting a (2 x 1) or a buckled c(4 x2)/p(2 x2) surface reconstruction [2]. Nearly exact Ge(100) substrates feature mutually perpendicularly oriented dimers on adjacent terraces separated by single layer steps.…”

Section: Introductionmentioning

confidence: 99%

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Barrigón¹,

Brückner²,

Supplie³

et al. 2013

Journal of Crystal Growth

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GalnP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors. However, the influence on the Ge surface is not well understood. Here, we studied vicinal Ge(100) surfaces annealed under tertiarybutylphosphine (TBP) supply in MOVPE by in situ reflection anisotropy spectroscopy (RAS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). While XPS reveals a P termination and the presence of carbon on the Ge surface, LEED patterns indicate a disordered surface probably due to by-products of the TBP pyrolysis. However, the TBP annealed Ge(100) surface exhibits a characteristic RA spectrum, which is related to the P termination. RAS allows us to in situ control phosphorus desorption dependent on temperature.

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“…Besides, in addition to the buckled b͑2 ϫ 1͒, higher order reconstructions of Ge͑001͒ surface, such as c͑4 ϫ 2͒ or p͑2 ϫ 2͒ have been observed. [20][21][22] These higher-order reconstructions are close in energy 20 and occur depending on different arrangements of asymmetric dimer bonds. Nevertheless, a commonly accepted picture of the reconstructed Ge͑001͒ surface consists of an asymmetric dimer ordering in a (2x1) structure at room temperature (RT), while the surface reconstructs according to a c͑4 ϫ 2͒ arrangement at low temperature.…”

Section: A Ge"001… 2ã 1 Surfacementioning

confidence: 96%

Initial stages ofPtgrowth onGe(001)studied by scanning tunneling microscopy and density functional theory

et al. 2004

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We have studied the initial stages of submonolayer Pt growth on the Ge͑001͒. We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge͑001͒ surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites.

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The Ge(001) surface

Cited by 222 publications

References 127 publications

Electronically stabilized nanowire growth

Electronically stabilized nanowire growth

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Initial stages ofPtgrowth onGe(001)studied by scanning tunneling microscopy and density functional theory

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