The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE

Ludowise, M. J.; Cooper, Christopher B.; Saxena, R. R.

doi:10.1007/bf02661191

Cited by 66 publications

(10 citation statements)

References 11 publications

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“…This result agrees well with the theory by Stringfellow (13). He studied vapor-solid distribution relation of A~.BI_xC alloys grown by MOVPE, where A and B are Group III and C Group V elements, and showed that, if the V/III molar ratio is large, the alloy composition is determined by the relative diffusion rates of A and B to the growing interface, in agreement with the experimental results for AlxGal xAs (14), AlxGal_xSb (15), and InxGa,_xAs (16). The growth rate for AI~Ga,_xN layers was studied as a f u n c t i o n of TMA c o n c e n t r a t i o n at substrate temperatures between 920 ~ and 1120~ When the substrate temperature was kept at 1020~ and the TMG concentration was fixed to 36 ~mol/min, the growth rate was in the range between 0.2 and 0.75 ixm/min and found to be proportional to the TMA c o n c e n t r a t i o n used (4-25 txmol/ min).…”

Section: J Electrochem Soc: S O L I D -S T a T E S C I E N C E A Nsupporting

confidence: 81%

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Koide

Itoh

Sawaki

et al. 1986

J. Electrochem. Soc.

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Epitaxial layers of AI~Ga~_.~N alloys are grown on sapphire (0001) and silicon (111) substrates by MOVPE in an ambient H2 gas at atmospheric pressure. By optimizing the reactor design and the growth conditions, parasitic reactions of metalorganic compounds with gaseous NH3 are remarkably reduced and the composition of AI~Ga~_~N layers can be controlled fairly well for the first time. The vapor-solid distribution coefficient for A1 is found to be approximately unity. At respective substrate temperatures of 1020~ for sapphire and 1050~ for silicon, single-crystal layers of AI~Ga~_~N with x up to 0.40 are obtained. The lattice constant is proportional to the molar fraction of A1N following Vegard's law. The electrical resistivity, carrier concentration, and Hall mobility of the layers are studied as a function of the composition.GaN and A1N have attracted much interest as the materials for optical devices in the short wavelength region, because they have direct energy bandgap of 3.4 (1) and 6.2 eV (2) at room temperature, respectively. For such device applications, single crystals with desired electrical properties are required. However, it has been fairly difficult to control their electrical Properties such as the type of conduction and the conductivity. As-grown GaN is usually an n-type material with relatively low resistivity, while A1N is always insulating. It is interesting to study, therefore, the growth of their alloy At~Ga~_xN single crystals and the properties of this alloy, because both GaN and AIN have a wurtzite structure. Although few reports of the growth of this alloy have appeared during the last several years, all of these reports have shown that the control of composition of the alloy is yet to be achieved for single crystals with good electrical properties.The growth of AI~GaI_~N layers by hydride vaporphase epitaxy (HVPE) was reported by Hagen et al. AI~.Gal_~N layers grown by MBE under high vacuum conditions are inferior to those grown by HVPE at atmospheric pressure (4) and metalorganic vapor-phase epitaxy (MOVPE) (7). This is probably due to the high equilibrium pressure of nitrogen over the alloy at typical growth temperatures resulting in high density of nitrogen vacancies, which may behave as electron donors. Furthermore, the lattice constant was not proportional to the molar fraction of A1N, suggesting the presence of some kinds of lattice defect. MOVPE has proven its suitability for the epitaxial growth of GaN of good quality (8), but very few works have been reported on this AlxGa~_~N alloy. Recently, Khan et al. (7) reported:the electrical and optical properties of AI~Gal_xN singlecrystal layers over the whole range of the composition prepared by using the low pressure MOVPE. However, no investigations of the controllability of the composition and the composition dependence of lattice constant were reported. In this paper, we report the epitaxial growth of AI~Gal_xN layers on sapphire and silicon substrates by MOVPE at atmospheric pressure and the achievement of good control o...

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Section: J Electrochem Soc: S O L I D -S T a T E S C I E N C E A Nsupporting

confidence: 81%

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Koide

Itoh

Sawaki

et al. 1986

J. Electrochem. Soc.

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“…The bandgap of In x Ga 1-x As varies quadratically, as a function of x, between that of the two binaries GaAs and InAs [14][15][16][17][18][19].…”

Section: Resultsmentioning

confidence: 99%

High Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE

Dyk

Leitch

Neethling

2002

phys. stat. sol. (a)

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“…Growth of this material is difficult because TEI and AsH 3 undergo a room temperature, parasitic, gas phase depletion reaction (1,2].…”

Section: Introductionmentioning

confidence: 99%

Convection Effects in Epitaxial Reactors: an Experimental and Theoretical Study

1988

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An experimental and theoretical study has been undertaken of the effects of natural and forced convection in horizontal epitaxial reactors. The epitaxial growth of GaAs was used as the experimental vehicle for this study. A mathematical model for mass, momentum and energy transfer in the reactor was developed. Excellent correlation between modeled and experimental results was demonstrated over a wide range of reactor pressures and susceptor geometries. Recirculation of hot gases, caused by natural convection, was found to result in a strong pressure dependence of growth rate at higher susceptor slopes. Low reactor pressures have been shown to be a more effective way to eliminate recirculation than high gas flow rates.

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The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE

Cited by 66 publications

References 11 publications

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

High Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE

Convection Effects in Epitaxial Reactors: an Experimental and Theoretical Study

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