The growth and electronic properties of α-Sn thin films grown on InSb(100) and () substrates by molecular beam epitaxy (MBE)

Yuen, Peter W. T.; Liu, W.K.; Stradling, R. A.; Joyce, B.A.

doi:10.1016/0022-0248(91)91112-n

Cited by 8 publications

(3 citation statements)

References 18 publications

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“…films, 43,44 strained-layer superlattices of InSb/InAlSb 45 as well as ␣-Sn films 46,47 have been grown on InSb substrates treated by this method. This treatment produces a smooth surface passivated by an oxide layer low in carbon content and easy to remove by in situ thermal desorption.…”

Section: Resultsmentioning

confidence: 99%

Preparation of InSb substrates for molecular beam epitaxy

Liu¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Several chemical cleaning procedures for InSb͑100͒ substrates were studied. Nomarski microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy were used to assess their credibility for use in molecular beam epitaxial growth of high quality films. The most satisfactory substrate surface was prepared using a modified CP4A etchant ͑HNO 3 :CH 3 COOH:HF:DI H 2 O at 2:1:1:10͒. This etchant was found to produce a flat surface with low defect density and a passivating layer consisting mainly of easily removable Sb oxide.

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Section: Resultsmentioning

confidence: 99%

Preparation of InSb substrates for molecular beam epitaxy

Liu¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It should be mentioned that the approach described can be useful for other analogous systems with several carrier species, for example heterojunctions of α-Sn/InSb [14] and InSb/CdTe [15].…”

Section: Experimental Results and Analysismentioning

confidence: 99%

An investigation of the multicarrier transport properties of -doped InSb at high temperatures using a mobility spectrum technique

Panaev¹,

Studenikin²,

Ткаченко³

et al. 1996

Semicond. Sci. Technol.

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Transport properties of Si-δ-doped InSb grown by molecular beam epitaxy are studied. The mobility spectrum (MS) analysis made over a wide temperature range reveals three species of carriers: those associated with the bulk of the film, and electrons in quantized subbands in the δ-layer. At low temperatures the MS data are consistent with self-consistent calculations and measurements of the Shubnikov-de Haas oscillations. The far-infrared cyclotron resonance lineshapes are well described by the Drude approximation using the obtained values of subband mobilities, concentrations and effective masses.

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“…For instance, epitaxial RT growth of ␣-Sn films is feasible on InSb͑001͒ substrates (aϭ6.4798 Å) because of close lattice matching. 3,[7][8][9][10][11][12] On the other hand, RT growth of epitaxial ␣-Sn-type overlayers on Si͑111͒ substrates has been observed to be limited to only ϳ3 atomic layers, because the larger lattice misfit ͑Si: aϭ5.4309 Å) favors the transition to ␤-Sn above such low Sn coverages. [13][14][15] In the present work we investigated Sn(t Sn )/Si(t Si ) multilayers of different Sn and Si thicknesses (t Sn and t Si , re-spectively͒.…”

Section: Introductionmentioning

confidence: 99%

Structure and vibrational dynamics of interfacial Sn layers in Sn/Si multilayers

Cuenya¹,

Keune²,

Sturhahn

et al. 2001

Phys. Rev. B

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The structure and vibrational dynamics of room-temperature-grown nanoscale Sn/amorphous (a-͒Si multilayers have been studied by x-ray diffraction, Raman scattering, 119 Sn Mössbauer spectroscopy, and 119 Sn nuclear-resonant inelastic x-ray scattering ͑NRIXS͒ of synchrotron radiation. With increasing Sn-layer thickness, the formation of ␤-Sn was observed, except at the Sn/Si interfaces, where a 10-Å-thick metastable pure amorphous-␣-Sn-like layer remains stabilized. By means of NRIXS we have measured the Sn-projected vibrational density of states ͑VDOS͒ in these multilayers ͑in particular, at the interfaces͒, and in 500-Å-thick epitaxial ␣-Sn films on InSb͑001͒ as a reference. Further, the Sn-specific Lamb-Mössbauer factor (f factor͒, mean kinetic energy per atom, mean atomic force constant, and vibrational entropy per atom were obtained. The VDOS of the amorphous-␣-Sn-like interface layer is observed to be distinctly different from that of ͑bulk͒ ␣-Sn and ␤-Sn, and its prominent vibrational energies are found to scale with those of amorphous Ge and Si. The observed small difference in vibrational entropy (⌬S/k B ϭϩ0.17Ϯ0.05 per atom͒ between ␣-Sn and interfacial amorphous-␣-like Sn does not account for the stability of the latter phase.

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The growth and electronic properties of α-Sn thin films grown on InSb(100) and () substrates by molecular beam epitaxy (MBE)

Cited by 8 publications

References 18 publications

Preparation of InSb substrates for molecular beam epitaxy

Preparation of InSb substrates for molecular beam epitaxy

An investigation of the multicarrier transport properties of -doped InSb at high temperatures using a mobility spectrum technique

Structure and vibrational dynamics of interfacial Sn layers in Sn/Si multilayers

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