The growth and properties of group III nitrides

Foxon, C.T.; Cheng, T.S.; Novikov, S.V.; Lacklison, D. E.; Jenkins, L. C.; Johnston, David; Orton, John; Hooper, S. E.; Baba-Ali, N.; Tansley, T.L.; Tret'yakov, V.V.

doi:10.1016/0022-0248(95)80068-n

Cited by 66 publications

(23 citation statements)

References 18 publications

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“…Lot of studies have been done on the polar c-plane GaN which is the most common orientation to grow GaN layer for device applications. [1][2][3][4] However, optoelectronic devices made out of the conventional polar orientation are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields. 5,6 Growing GaN on nonpolar orientation such as (10-10) m-plane or (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-plane, avoids the polarization effects.…”

Section: Introductionmentioning

confidence: 99%

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

Mukundan

Mohan

Chandan

et al. 2014

Journal of Applied Physics

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We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device.

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Section: Introductionmentioning

confidence: 99%

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

Mukundan

Mohan

Chandan

et al. 2014

Journal of Applied Physics

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“…Most of the early works dealt with impurity like arsenic concentrations in GaN films [9][10][11]. It was also reported [12] that As-doped GaN films deposited by molecular beam epitaxy (MBE) show strong blue emission. Subsequently, there have been several reports on the formation of N-rich GaAs x N 1−x alloy films containing arsenic up to 6-7% [13,14].…”

Section: Introductionmentioning

confidence: 98%

Spectroscopic ellipsometry studies of reactively sputtered nitrogen-rich GaAsN films

Biswas

Yadav

Bhattacharyya

et al. 2011

Journal of Non-Crystalline Solids

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“…Most commonly, a plasma source is used in the nitride growth by MBE to produce the active nitrogen species. 7,8 Less common in MBE is the use of ammonia as the nitrogen precursor. 9,10 For the present purpose, selective area growth, ammonia may be preferred because of the potentially different cracking efficiencies of ammonia gas on different surfaces.…”

Section: Introductionmentioning

confidence: 99%