Selective area growth of GaN using gas source molecular beam epitaxy

Gupta, Varun; Averett, Kent L.; Koch, Maximilian; McIntyre, B.; Wicks, G. W.

doi:10.1007/s11664-000-0071-y

Cited by 16 publications

(8 citation statements)

References 11 publications

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“…This indicates that selective growth using NH 3 -based MOMBE can be carried out in a very wide range of temperatures. Selective growth of GaN was achieved with superior selectivity because it is difficult to decompose the precursors on the SiO 2 surface [20].…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Lin

Abe

Maruyama

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Lin

Abe

Maruyama

et al. 2011

Journal of Crystal Growth

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“…[13][14][15] The MBE method allows epitaxial deposition with the precision of almost single atomic layers only on the exposed sapphire at the base of the square depressions, with the deposited SiO 2 blocking growth over the remainder of the wafer substrate. 16 The front-side DBR mirror consists of non-conducting, alternating λ∕4-AlN∕GaN layers and has been described. 17 After growing the front-side DBR mirror, photoresist is patterned for the dry etch removal of four diagonal sections and corner squares of the AlN antireflective layer to grow the n-type GaN that will form the cathode of the VCSEL diode.…”

Section: Methods Of Si-apd/gan-vcsel Electrical Andmentioning

confidence: 99%

“…(9) and E 0 1 is the valence band-edge with strain defined in Eq. (16). The wavefunction of the electron is given according to Eq.…”

mentioning

confidence: 99%

Design of a high sensitivity emitter-detector avalanche photodiode imager using very high transmittance, back-illuminated, silicon-on-sapphire

Stern

2012

Opt. Eng

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Abstract. We present a detailed design study for a novel solid-state focal plane array of silicon avalanche photodiodes (APDs) using an advanced silicon-on-sapphire substrate incorporating an antireflective bilayer consisting of crystalline aluminum nitride (AlN) and amorphous, non-stoichiometric, silicon rich, silicon nitride (a-SiN X <1.33 ) between the silicon and sapphire. The substrate supports electrical and optical integration of a nearly 100% quantum efficiency, silicon APD capable of operating with wide dynamic range in dual linear or Geiger-mode, with a gallium nitride (GaN) laser diode in each pixel. The APD device and epitaxially grown GaN laser are fabricated within a crystallographically etched silicon mesa. The high resolution 27 μm emitter-detector pixel design enables single photon sensitive, solid-state focal plane arrays (FPAs), with passive and active imaging capability in a single FPA. The square 27 μm emitterdetector pixel achieves SNR > 10 in active detection mode for Lambert surfaces at 20,000 m. IntroductionThere is a growing need in science, industry and medical research for compact, large scale detector arrays capable of imaging with high sensitivity in a passive and active detection mode with detectors providing their own source of short pulse, laser illumination to the area in the scene that is conjugated (using a camera lens for example) back to the respective pixel, providing the laser light pulse. In this design study paper, we demonstrate through detailed calculation means that a novel, back-illuminated photonic device design that optically and electrically integrates a nearly 100% quantum efficiency silicon avalanche photodiode (APD), with a vertical-cavity surface-emitting (VCSEL) gallium nitride (GaN) laser diode in a single pixel will enable imaging with high sensitivity [signal-to-noise ratio ðSNRÞ > 10] near room temperature at −30°C, in an active detection mode for Lambert surfaces at ranges up to 20,000 m.The novel emitter-detector pixel design supports a compact, square 27 μm side length silicon APD detector for high resolution, large scale arrays, with each detector capable of wide dynamic range operation in dual linear or Geigermode for passive and active two-dimensional (2D) and three-dimensional (3D) imaging. The advanced emitterdetector pixel achieves nearly 100% APD detector quantum efficiency at the laser emission wavelength of λ 0 ¼ 370 nm, enabled by a very high transmittance silicon-on-sapphire substrate incorporating an antireflective bilayer of crystalline aluminum nitride (AlN) and amorphous, non-stoichiometric, silicon rich, silicon nitride (a-SiN X<1.33 ) that provides optimal

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“…In LAIMCE, lateral growth is achieved by supplying molecular beams at low incidence angles. NH 3 -based metal-organic molecular beam epitaxy (NH 3 -based MOMBE) is expected to achieve more selective GaN growth than conventional techniques due to the lower cracking efficiencies of the precursors (e.g., trimethylgallium (TMG) and ammonia (NH 3 )) on SiO 2 masks [11,12]. Therefore, NH 3 -based MOMBE is thought to be suitable for LAIMCE of GaN.…”

Section: Introductionmentioning

confidence: 99%

Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

Lin

Abe

Maruyama

et al. 2011

Journal of Crystal Growth

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Selective area growth of GaN using gas source molecular beam epitaxy

Cited by 16 publications

References 11 publications

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Design of a high sensitivity emitter-detector avalanche photodiode imager using very high transmittance, back-illuminated, silicon-on-sapphire

Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

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