Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

Lin, Chia‐Hung; Abe, Ryota; Maruyama, Toru; Naritsuka, Shigeya

doi:10.1016/j.jcrysgro.2010.10.051

Cited by 9 publications

(5 citation statements)

References 15 publications

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“…After the treatment, GaN selective growth was performed by CBE. [27][28][29][30][31][32] The openings for the selective growth were cut into a SiO 2 mask along the ½11 20 direction by conventional photolithography. Their widths and periods were set at 5 and 10 µm, respectively.…”

Section: Methodsmentioning

confidence: 99%

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Kusakabe

Sugiyama

Takenaka

et al. 2018

Jpn. J. Appl. Phys.

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Low-pressure microplasma treatment was performed to clean a substrate surface prior to the selective growth of GaN by chemical beam epitaxy. To investigate the cleaning mechanism, the process pressure and process time were systematically varied. The plasma distribution was also studied using a special sheet, whose color changes following the irradiation of plasma species. Consequently, it was found that the range of microplasma irradiation increased with decreasing process pressure, and simultaneously, the morphology of selective growth was improved. Secondary ion mass spectrometry measurements show that the oxygen concentration at the growth interface was reduced from 9.7 × 1014 to 2.6 × 1013 atoms/cm2 by the microplasma treatment. Otherwise, the surface oxides resulted in the growth of a rough surface with the suppression of the layer-by-layer growth.

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Section: Methodsmentioning

confidence: 99%

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Kusakabe

Sugiyama

Takenaka

et al. 2018

Jpn. J. Appl. Phys.

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“…After the plasma treatment with a process time between 0 and 45 s, a GaN layer was grown on a c-plane GaN template substrate by NH 3 -based MOMBE. 28,29) In the case of selective growth, a flat a-plane GaN template substrate was used. On the other hand, microchannels with a width of 5 µm and a period of 10 µm were cut into a SiO 2 mask along the [1 100] direction by conventional photolithography in the case of LAIMCE.…”

Section: Methodsmentioning

confidence: 99%

“…Low-angle-incidence microchannel epitaxy (LAIMCE) is one of the excellent methods of reducing the number of dislocations in the heteroepitaxially grown layers. [16][17][18][19][20] In LAIMCE, a layer is laterally grown from a narrow opening, called a "microchannel", cut in a mask. In molecular beam epitaxy (MBE), the lateral growth is performed by supplying molecular beams at a very low angle, as illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

Effect of N₂ microplasma treatment on initial growth of GaN by metal–organic molecular beam epitaxy

Suzuki

Kusakabe

Uchiyama

et al. 2016

Jpn. J. Appl. Phys.

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N2 atmospheric microplasma was applied to improve the yields and reproducibility of the initial growth of GaN by metal–organic molecular beam epitaxy (MOMBE). The plasma treatment was found to be effective in cleaning the surface, and excellent flat growth was achieved even in the early stage of the growth. The effect of the air exposure after plasma treatment was also studied, and the yield of the growth was found to be largely decreased by the air exposure even after the treatment. Therefore, the oxidation of the substrate is one of main causes of the poor initial growth and the installation of the microplasma equipment in the MBE loading chamber is useful for suppressing the oxidation after the treatment. Atomic force microscopy (AFM) measurement shows that the microplasma treatment is also effective for undoing the surface double steps through etching, which is helpful for a very smooth layer-by-layer growth in the early stage of growth.

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“…However, {11 01} GaN sidewalls are easily formed, which terminates the lateral overgrowth of GaN [17].…”

Section: Introductionmentioning

confidence: 99%

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

Lin

Abe

Uchiyama

et al. 2012

Journal of Crystal Growth

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Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

Cited by 9 publications

References 15 publications

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Effect of N₂ microplasma treatment on initial growth of GaN by metal–organic molecular beam epitaxy

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

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Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

Cited by 9 publications

References 15 publications

Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

Effect of N2 microplasma treatment on initial growth of GaN by metal–organic molecular beam epitaxy

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

Contact Info

Product

Resources

About

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Effect of N₂ microplasma treatment on initial growth of GaN by metal–organic molecular beam epitaxy