Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Lin, Chia‐Hung; Abe, Ryota; Maruyama, Toru; Naritsuka, Shigeya

doi:10.1016/j.jcrysgro.2010.10.195

Cited by 17 publications

(7 citation statements)

References 20 publications

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“…Alternative solution could come from localized epitaxy. GaN selective growth has been demonstrated with Ti , SiO 2 , SiN x , or Si 3 N 4 masks, by metal‐organic chemical vapor deposition (MOCVD) for temperatures around 1000 °C or molecular beam epitaxy (MBE) at lower temperatures . But the use of any foreign element as mask during growth should be considered with precautions for obvious contamination reasons.…”

Section: Introductionmentioning

confidence: 99%

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Jaud

Auvray

Kahouli

et al. 2016

Phys. Status Solidi A

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In this study, a new approach toward localized p‐type doping of GaN was explored by implementing vapor–liquid–solid (VLS) transport for both reducing the growth temperature and reaching very high Mg incorporation levels. The starting seeds are GaN(0001) epilayers grown on Si(111). The growth cycle includes three steps. At first, Ga is deposited by MOCVD onto the GaN surface, resulting in a network of Ga droplets with sub‐micrometer diameters. Then, Mg is incorporated into the droplets, from the gas phase, using (MeCP)2Mg precursor. Finally, droplets are nitridated at 600–700 °C in flowing NH3. Performing one complete growth cycle leads to a network of well‐separated dots and/or ring‐shaped GaN features. It is demonstrated that the Mg content in the droplets drastically influences the GaN growth mode. Increasing Mg incorporation promotes growth at the liquid/solid interface versus growth at the triple line. To improve the seed coverage, several successive cycles have been performed leading to GaN films with thickness up to ∼250 nm. SIMS analyses demonstrate the very high incorporation of Mg in the VLS‐grown material, with concentrations from 3 × 1019 to 8 × 1021 cm−3. Nevertheless, pronounced O incorporation (a few 1020 cm−3) is also found.

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Section: Introductionmentioning

confidence: 99%

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Jaud

Auvray

Kahouli

et al. 2016

Phys. Status Solidi A

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“…This result corresponds to the transition of the RHEED patterns; the spotty pattern obtained at R lower than 100 became a blurred streaky pattern at R¼200. The smooth (0001) GaN surface forms easily at higher R because a high density of 3D GaN islands are generated at higher R, which easily coalesce to form a flat (0001) GaN surface [18]. Some polycrystals were also observed on the SiO 2 masks as R was increased for the same reason.…”

Section: Methodsmentioning

confidence: 98%

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

Lin

Abe

Uchiyama

et al. 2012

Journal of Crystal Growth

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“…NH 3 -based metal-organic molecular beam epitaxy (MOMBE) has been used to perform GaN LAIMCE because it enhances growth selectivity by introducing chemical reactions to the growth mechanism. 7) The temperature and [NH 3 ]/[TMG] (TMG: trimethylgallium) flow rate dependences of a-plane GaN LAIMCE have been studied to optimize the growth conditions for obtaining a wide lateral overgrowth. 8,9) The crystal direction of the microchannel is another important factor for controlling lateral growth because it largely affects facet formation on the sides.…”

Section: Introductionmentioning

confidence: 99%

Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal–Organic Molecular Beam Epitaxy

Uchiyama¹,

Lin²,

Suzuki³

et al. 2013

Jpn. J. Appl. Phys.

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The effects of varying the supply direction of precursors on a-plane GaN low angle incidence microchannel epitaxy by ammonia-based metal–organic molecular beam epitaxy were studied. Lateral growth was found to be wider when precursors were supplied from the [0001] direction than from the [0001̄] direction. The (0001̄) face formed on the supply side suppressing lateral growth when the precursors were supplied from the [0001̄] direction, while lateral growth was enlarged by the intersurface diffusion of adatoms from the side to the top when supplied from the [0001] direction. A smaller cross-section of lateral growth was experimentally observed when the (0001̄) face appeared on the supply side, which suggests that the chemical character of the side also affects lateral growth. The offset angle of the opening is another important factor for determining the lateral growth, which largely affects the formation of facets on the sides and, consequently, the grown shape.

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Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Cited by 17 publications

References 20 publications

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal–Organic Molecular Beam Epitaxy

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