The growth kinetics of Si1−xGex layers from SiH4 and GeH4

Потапов, А. В.; Orlov, L. K.; Ivin, S. V.

doi:10.1016/s0040-6090(98)01236-x

Cited by 27 publications

(13 citation statements)

References 5 publications

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“…Кинетика физико-химических процессов, протекающих на поверхности растущего SiGe-слоя в методе Si−GeH 4 MBE Для описания кинетики роста слоев твердого раствора SiGe в методе Si−GeH 4 MBE используем подход, пред-ложенный в работах [11,12]. Ниже будем предполагать, что молекулы газообразного германа хемосорбируются диссоциативно, занимая две свободные связи, а соответ-ствующая реакция имеет вид GeH 4 (g) + 2 → GeH 3 + H. Образовавшаяся в ходе реакции молекула GeH 3 далее распадается на промежуточные фрагменты, при этом процесс в общем случае может идти различными путями в зависимости от концентрации продуктов распада и свойств поверхности [13,14].…”

Section: (поступило в редакцию 14 июня 2016 г)unclassified

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Влияние атомарных пучков кремния и германия на кинетику роста слоев Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- в методе Si-GeH-=SUB=-4-=/SUB=- молекулярно-пучковой эпитаксии

Orlov¹,

Ivin²,

Фомин³

2017

Журнал Технической Физики

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Section: (поступило в редакцию 14 июня 2016 г)unclassified

“…Тогда система кинетических уравнений для рассмат-риваемого технологического процесса по аналогии с работами [8,11,12] может быть записана в виде …”

Section: (поступило в редакцию 14 июня 2016 г)unclassified

Влияние атомарных пучков кремния и германия на кинетику роста слоев Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- в методе Si-GeH-=SUB=-4-=/SUB=- молекулярно-пучковой эпитаксии

Orlov¹,

Ivin²,

Фомин³

2017

Журнал Технической Физики

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“…[10][11][12][13][14][15][16][17][18] Most of these have modeled the epitaxial growth of Si and SiGe layers, and they can be divided into two main groups. The first covers models that were developed on the basis of the boundary-layer theory and only consider physical diffusion effects (e.g., Refs.…”

Section: -5mentioning

confidence: 99%

“…The second encompasses models that consider the surface reactions (e.g., Refs. [12][13][14][15][16][17][18]. Since in CVD reactors, the boundary layer is stationary or at most moving slowly, the input value of partial pressure of the reactants cannot be upheld throughout the chamber.…”

Section: -5mentioning

confidence: 99%

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi

Boer

Nanver

2012

Journal of Applied Physics

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In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B 2 H 6 ) as gas source on a nonrotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions by applying the actual parabolic gas velocity and temperature gradient profiles in the reactor. These are calculated theoretically and also simulated with FLUENT software. The influence of an axial and lateral diffusion of diborane species and the validity of the model for laminar flow in experimental CVD processes are also treated. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface H-coverage, and reactor dimensions. By only adjusting these reactor/process parameters, the model was successfully transferred from the ASM Epsilon One to the Epsilon 2000 reactor which has totally different reactor conditions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors. V C 2012 American Institute of Physics. [http://dx

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“…(5,6,8). In the case of monosilane pyrolysis a quarter of the quantity of surface hydrogen desorbs through reaction (5), the second quarter desorbs through reaction (6).…”

Section: 3mentioning

confidence: 99%

The influence of lateral interactions on surface pyrolysis of silicon hydrides

Потапов

Orlov

2003

phys. stat. sol. (c)

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In this paper features of disintegration of silicon hydrides on Si(100) surface are considered. The simulation of hydrogen TPD-spectra has shown that there are three ways for hydrogen desorbtion and that disintegration of molecules SiH 2 proceeds through bimolecular reactions only. The comparison of calculations and experiments allowed to estimate kinetic constants of elementary reactions of pyrolysis.

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The growth kinetics of Si1−xGex layers from SiH4 and GeH4

Cited by 27 publications

References 5 publications

Влияние атомарных пучков кремния и германия на кинетику роста слоев Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- в методе Si-GeH-=SUB=-4-=/SUB=- молекулярно-пучковой эпитаксии

Влияние атомарных пучков кремния и германия на кинетику роста слоев Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- в методе Si-GeH-=SUB=-4-=/SUB=- молекулярно-пучковой эпитаксии

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

The influence of lateral interactions on surface pyrolysis of silicon hydrides

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