The growth of BaTiO3 films on (001) MgAl2O4 substrates by pulsed laser deposition technique

Lei, Chang

doi:10.1016/j.tsf.2006.06.006

Cited by 11 publications

(7 citation statements)

References 16 publications

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“…have been grown by MBE, PLD and sputtering on various substrates, including metal oxides such as SrTiO 3 (001), 49,[195][196][197][198][199][200][201][202][203][204][205][206][207][208][209][210][211][212][213][214] MgO(001), 196,[215][216][217][218][219] GdScO 3 (110), 218,220 DyScO 3 (110), 218 LaAlO 3 (100), 217 MgAl 2 O 4 (001), 221 as well as on semiconductors, including Si(001), [222][223][224][225][226][227][228][229] and Ge(001). [230][231][232] In most instances, an intermediate buffer layer is used as an electrical contact or for the release of misfit strain.…”

Section: Batiomentioning

confidence: 99%

Epitaxial ferroelectric interfacial devices

Vaz

Bibès

Rabe

et al. 2021

Applied Physics Reviews

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Epitaxial ferroelectric interfacial devicesFerroelectric interfacial devices consist of materials systems whose interfacial electronic properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are modulated by a ferroelectric layer set in its immediate vicinity. While the prototypical example of such a system is the ferroelectric field effect transistor first proposed in the 1950s, only with the recent advances in the controlled growth of epitaxial thin films and heterostructures, and the recent physical understanding down to the atomic scale of screening processes at ferroelectric-semiconducting and -metallic interfaces made possible by first principles calculations, have the conditions been met for a full development of the field. In this review, we discuss the recent advances in ferroelectric interfacial systems, with emphasis on the ferroelectric control of the electronic properties of interfacial devices with well ordered (epitaxial) interfaces. In particular, we consider the cases of ferroelectric interfacial systems aimed at controlling the correlated state, including superconductivity, Mott metallic-insulator transition, magnetism, charge, and orbital order, and charge and spin transport across ferroelectric tunnel junctions. The focus is on the basic physical mechanisms underlying the emergence of interfacial effects, the nature of the ferroelectric control of the electronic state, and the role of extreme electric field gradients at the interface in giving rise to new physical phenomena. Such understanding is key to the development of ferroelectric interfacial systems with characteristics suitable for next generation electronic devices based on controlling the correlated state of matter.

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Section: Batiomentioning

confidence: 99%

Epitaxial ferroelectric interfacial devices

Vaz

Bibès

Rabe

et al. 2021

Applied Physics Reviews

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“…There have been several reports on BTO and related films with tensile strain induced by MAO. 7,8 These films, however, show poor crystalline quality with relaxed epitaxial strain due to a high density of defects at the interface between spinel and perovskite. In this letter, we introduced a rock-salt structure buffer layer Ni 0.6 Al 0.4 O 1 þ d (NAO) to mediate coherent tensile strain from spinel MAO substrates to perovskite Ba 0.8 Sr 0.2 TiO 3 (BST) thin films.…”

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confidence: 99%

Coherent in-plane tensile strain in perovskite Ba0.8Sr0.2TiO3 films on spinel MgAl2O4 substrates

Zhou¹,

Stern²,

Silwal³

et al. 2012

Applied Physics Letters

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In-plane dielectric properties of epitaxial Ba0.7Sr0.3TiO3 thin films grown on GaAs for tunable device application J. Appl. Phys. 112, 054110 (2012); 10.1063/1.4749270 Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition J. Appl. Phys. 112, 044105 (2012); 10.1063/1.4748288 Effect of annealing on structural and electrical properties of laser ablated Sr 0.8 Ba 0.2 Bi 2 Ta 2 O 9 thin films

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“…A rheostat (0 -250 V) with maximum current of 12A is the power source of the resistive heater. For the spectroscopic control of the ablation plume [14], two Ocean Optics HR400 spectrometers, were employed. They work respectively in the 200 -400 nm and 400 -600 nm range, with 1 nm of resolution.…”

Section: Introductionmentioning

confidence: 99%

Development of a Low Cost Pulsed Laser Deposition System for Thin Films Growth

Oliva¹,

Zandalazini²,

Ferrero³

et al. 2012

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Pulsed Laser Deposition (PLD) is a powerful technique to grow thin films. Oxides, Magnetics and superconducting materials have been obtained by PLD and theirs properties are strongly dependent of deposition parameters. The construction of a simple and cheap PLD system that is suitable for growing various thin films, including magnetic materials, controlling some deposition parameters is presented. The design characteristics and construction are presented for each one of the devices that compose this PLD system. The equipment has the possibility of carrying out films deposition using up to five targets under controlled atmosphere and substrate temperature. The system also allows controlling the cool off sample time after growing up films at high temperatures. A wide range of relative speeds between target and substrate axial rotation can be externally controlled. With the configuration and the dimensions adopted in their construction, a PLD system of great experimental flexibility is achieved, at a very low cost regarding the commercial systems. To evaluate their performance and effectiveness, the deposition characteristics of a BaFe 12 O 19 film on (0001) sapphire substrate is presented.

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The growth of BaTiO3 films on (001) MgAl2O4 substrates by pulsed laser deposition technique

Cited by 11 publications

References 16 publications

Epitaxial ferroelectric interfacial devices

Epitaxial ferroelectric interfacial devices

Coherent in-plane tensile strain in perovskite Ba0.8Sr0.2TiO3 films on spinel MgAl2O4 substrates

Development of a Low Cost Pulsed Laser Deposition System for Thin Films Growth

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