Coherent in-plane tensile strain in perovskite Ba0.8Sr0.2TiO3 films on spinel MgAl2O4 substrates

Zhou, Xiaobo; Stern, Ilan; Silwal, Punam; Miao, Ludi; Kim, Dae Ho

doi:10.1063/1.3677938

Cited by 3 publications

(1 citation statement)

References 14 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is also reported that large lattice mismatches cause the high lattice strain, defects and misfit strain in the films that in turn lead to the formation of a better polycrystalline structure [9]. These lattice mismatches induced effects are usually accompanied with large defect densities [10] as we also observed here. From electrical point of view, the electron affinities (𝑞𝜒) of ZnS and CdS are 3.8 eV [11] and 4.5 eV [12] , respectively.…”

Section: Resultssupporting

confidence: 82%

ROLE OF Au NANOSHEETS IN ENHANCING THE PERFORMANCE OF Yb/ZnS/CdS/Au TUNNELING PHOTOSENSORS

Qasrawi¹,

Saa²,

Khanfar³

et al. 2020

View full text Add to dashboard Cite

In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10-5 mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of ~105 at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers.

show abstract

Section: Resultssupporting

confidence: 82%

ROLE OF Au NANOSHEETS IN ENHANCING THE PERFORMANCE OF Yb/ZnS/CdS/Au TUNNELING PHOTOSENSORS

Qasrawi¹,

Saa²,

Khanfar³

et al. 2020

View full text Add to dashboard Cite

show abstract

B-site ordering and strain-induced phase transition in double-perovskite La2NiMnO6 films

Cheng

et al. 2018

Sci Rep

View full text Add to dashboard Cite

The magnetic and electrical properties of complex oxide thin films are closely related to the phase stability and cation ordering, which demands that we understand the process-structure-property relationships microscopically in functional materials research. Here we study multiferroic thin films of double-perovskite La2NiMnO6 epitaxially grown on SrTiO3, KTaO3, LaAlO3 and DyScO3 substrates by pulsed laser deposition. The effect of epitaxial strains imposed by the substrate on the microstructural properties of La2NiMnO6 has been systematically investigated by means of advanced electron microscopy. It is found that La2NiMnO6 films under tensile strain exhibit a monoclinic structure, while under compressive strain the crystal structure of La2NiMnO6 films is rhombohedral. In addition, by optimizing the film deposition conditions a long-range ordering of B-site cations in La2NiMnO6 films has been obtained in both monoclinic and rhombohedral phases. Our results not only provide a strategy for tailoring phase stability by strain engineering, but also shed light on tuning B-site ordering by controlling film growth temperature in double-perovskite La2NiMnO6 films.

show abstract

In-plane ferroelectricity and enhanced Curie temperature in perovskite BaTiO3 epitaxial thin films

Komatsu

Suzuki

Aoki

et al. 2020

Applied Physics Letters

View full text Add to dashboard Cite

In-plane ferroelectric polarization in BaTiO3 (BTO) epitaxial thin films on MgAl2O4(001) (MAO) is reported. The directional dependence of both in-plane polarization curves and Raman spectroscopy shows that the films have an orthorhombic structure at room temperature, in contrast to the tetragonal structure of the corresponding bulk. The largest in-plane polarization value among BTO-based tensile-strained films is obtained. The temperature dependence of the lattice constants shows that the Curie temperature of the thin films is as high as 220 °C, which is higher than that of the bulk by 100 °C. The significant enhancement of the Curie temperature is attributed to high-quality coherent epitaxial growth due to perfect matching between the lattice parameter of the c-axis of BTO and that of MAO.

show abstract

Coherent in-plane tensile strain in perovskite Ba0.8Sr0.2TiO3 films on spinel MgAl2O4 substrates

Cited by 3 publications

References 14 publications

ROLE OF Au NANOSHEETS IN ENHANCING THE PERFORMANCE OF Yb/ZnS/CdS/Au TUNNELING PHOTOSENSORS

ROLE OF Au NANOSHEETS IN ENHANCING THE PERFORMANCE OF Yb/ZnS/CdS/Au TUNNELING PHOTOSENSORS

B-site ordering and strain-induced phase transition in double-perovskite La2NiMnO6 films

In-plane ferroelectricity and enhanced Curie temperature in perovskite BaTiO3 epitaxial thin films

Contact Info

Product

Resources

About