In-plane ferroelectricity and enhanced Curie temperature in perovskite BaTiO3 epitaxial thin films

Komatsu, Katsuyoshi; Suzuki, Itsuko S.; Aoki, Takumi; Hamasaki, Yosuke; Yasui, Shintaro; Itoh, Makoto; Taniyama, Tomoyasu

doi:10.1063/5.0013484

Cited by 7 publications

(13 citation statements)

References 33 publications

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“…The temperature dependence of the in-plane lattice constant of our square-tensile-strained BaTiO3 film on the BaZrO3 substrate exhibits a change in slope at ~415 °C (Fig. S10), close to the predicted Tc from ab initio calculations [15] and higher than that on MgAl2O4 substrate [20] .…”

Section: Crystallographic Structure Of Batio 3 Film On the Bazro 3 Su...supporting

confidence: 69%

“…The change in slope of the temperature dependence of the lattice constant had often been referred to as evidence of a ferroelectric phase transition. [19,36] The temperature dependence of the in-plane lattice constant of the square-tensile-strained BaTiO 3 film on the BaZrO 3 substrate exhibited a change in slope at ≈415 °C (Figure S12, Supporting Information), close to the predicted T c from ab initio calculations [15] and higher than that on MgAl 2 O 4 substrate. [19] www.advmat.de www.advancedsciencenews.com PFM Measurements: The space group Pmm2 has 2mm symmetry, where the twofold axis is parallel to the polar [100] axis.…”

Section: Methodssupporting

confidence: 60%

“…The change in slope of the temperature dependence of the lattice constant has often been referred to as evidence of a ferroelectric phase transition [20,37] . The temperature dependence of the in-plane lattice constant of our square-tensile-strained BaTiO3 film on the BaZrO3 substrate exhibits a change in slope at ~415 °C (Fig.…”

Section: Crystallographic Structure Of Batio 3 Film On the Bazro 3 Su...mentioning

confidence: 99%

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Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

et al. 2022

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Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO 3 , which boosts square-tensile-strain to BaTiO 3 and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti 3+ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals three types of in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.

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Section: Crystallographic Structure Of Batio 3 Film On the Bazro 3 Su...supporting

confidence: 69%

Section: Methodssupporting

confidence: 60%

Section: Crystallographic Structure Of Batio 3 Film On the Bazro 3 Su...mentioning

confidence: 99%

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Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

et al. 2022

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“…This indicates a potential phase transformation at this temperature to a phase that has a single out-of-place lattice parameter. We believe this is most likely a paraelectric-toferroelectric phase transition 28,29 with the c-axis and polarization lying in-plane. As discussed later, SHG studies definitely show that at room temperature, this phase lacks an inversion center.…”

Section: ■ Resultsmentioning

confidence: 88%

Epitaxial BaTiO₃ on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

Vura

Jeyaselvan

Biswas

et al. 2021

ACS Appl. Electron. Mater.

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The integration of BaTiO3 with Si(100) is essential to exploit its ferroelectric capabilities in the well-established Si-complementary metal–oxide–semiconductor (CMOS) technological platform. To enable this goal, epitaxial BaTiO3 films with both in-plane and out-of-plane polarization are demonstrated on Si(100) with just a single TiN layer that is also CMOS-compatible. This change in polarization direction is brought about very simply by changing the growth temperature. Piezo force microscopy and optical second-harmonic generation measurements confirm the presence of out-of-plane and in-plane polarization. Films deposited at relatively higher temperatures of 800 °C have polarization lying in-plane at room temperature. The nonlinear dielectric susceptibilities were found to be comparable to the state-of-the-art films integrated with more complex transition schemes. Films deposited at a relatively lower temperature of 600 °C are defective and revert to 800 °C like films on annealing. The defects however confer on them an out-of-plane polarization with a large tetragonality of 1.6% at 500 °C. The changes in anomalous lattice expansion in out-of-plane coupled with coefficient of thermal expansion (CTE) strain result in orientation selection in our films.

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“…Since bulk ferroelectrics need a high voltage for reorientation of ferroelectric polarization, they are apparently not suitable for scaled high-volume manufacturing CMOS technology. Therefore, reorientation of ferroelectric polarization enabled by in-plane polarization of ferroelectric thin films is believed to be suitable for lower electric voltage and hence low-power device applications . Alternatively, it is expected that the out-of-plane polarization also (e.g., as predicted for single unit cell 2D ferroelectrics like In 2 Se 3 ) would work similarly as traditional ferroelectric materials in device structures, for instance, to screen the semiconductor channel charges with electric field variation in ferroelectric/semiconductor systems such as MFS, MFIS, and MFMIS device structures.…”

Section: Ferroelectric Materialsmentioning

confidence: 99%

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Khosla

Sharma

2021

ACS Appl. Electron. Mater.

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Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and electronic device applications, particularly in state-of-the-art complementary metal oxide semiconductor (CMOS) logic circuits and digital information storage media. Recent unprecedented advancements and future perspectives on integrating ferroelectric materials, particularly with high-κ dielectrics for electronic devices, are weighed. The emphasis is on (i) application (logic and memory); (ii) ferroelectric materials (organic, inorganic, and two-dimensional (2D)); (iii) device structures (metal/ferroelectric/metal (MFM), metal/ferroelectric/semiconductor (MFS), metal/ferroelectric/insulator/semiconductor (MFIS), and metal/ferroelectric/metal/insulator/semiconductor (MFMIS)); and (iv) next-generation electronic devices (negative capacitance field effect transistors (NC-FETs), ferroelectric RAM (FeRAM), ferroelectric field effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs)). In NCFETs, the ferroelectric layer serves as a negative capacitor so that the channel surface potential can be amplified more than the gate voltage. Hence, devices can overcome the “Boltzmann tyranny” and operate with a steep subthreshold swing < 60 mV/dec and supply voltage < 0.5 V. Thus, NC-FETs would be more suitable for high-speed logic operations, scalability, low-power, and cost-effectiveness, targeting applications such as 14T-type CPU registers and 6T-type cache static random access memory (SRAM). Ferroelectrics also opens a path to solving the problems associated with technology scaling due to the unique structural and electronic properties. Ferroelectric memories are anticipated to be in different flavors based on optimum performance, cost, and end-user requirements. Herein, we deliberate on the exciting possibilities for the development of device structures such as one-transistor one-capacitor (1T-1C)-type FeRAM with fast access time (<10 ns), high endurance (∼>1014 cycles), and moderate data retention being considered as a strong contender for volatile dynamic random access memory (DRAM), while, for nonvolatile memory applications, 1T-type ferroelectric gated transistors, called FeFETs with nondestructive readout, fast access time (∼<100 ns), moderate endurance (>109 cycles), and high retention time (>10 years) have the potential to compete with embedded solid-state drives (SSDs). Finally, the FTJs with three-dimensional cross-point architecture are strong contenders for high-density niche storage applications to interchange with low-cost per bit external hard disk drives. We conclude with a brief survey of recent ferroelectrics advances and potential futuristic comparisons for next-generation computing and storage device applications so the field may expand and pave the way for high-volume manufacturing of semiconductor technology down to the sub-5 nm node over the coming years.

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In-plane ferroelectricity and enhanced Curie temperature in perovskite BaTiO3 epitaxial thin films

Cited by 7 publications

References 33 publications

Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

Epitaxial BaTiO₃ on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

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In-plane ferroelectricity and enhanced Curie temperature in perovskite BaTiO3 epitaxial thin films

Cited by 7 publications

References 33 publications

Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

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Product

Resources

About

Epitaxial BaTiO₃ on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer