The growth of interfacial compounds between titanium dioxide and bismuth oxide

Lu, Chun-Wei; Chang, Li-Chung; Lu, Yong; Lu, Fu-Hsing

doi:10.1016/j.ceramint.2009.03.001

Cited by 12 publications

(2 citation statements)

References 9 publications

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“…At concentrations of n(Bi)/n(Ti) > 1 in the Bi 2 O 3 -TiO 2 system, compounds belonging to the family of layered phases are formed [33]. Due to titanium diffusion, a stable compound Bi 4 Ti 3 O 12 is formed [34]. In the Bi 2 O 3 -Fe 2 O 3 system, the reaction proceeds due to mass transfer: Fe 2 O 3 + Bi 2 O 3 → 2BiFeO 3 .…”

Section: Structural Characteristicsmentioning

confidence: 99%

Surface Functionalization of TiO2 Nanotubes Modified with a Thin Film of BiFeO3

Ramazanov,

Orudzhev,

Gajiev

2023

Surfaces

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The atomic layer deposition method allows for the production of a thin film with a high aspect ratio on the uneven surface of titanium dioxide nanotubes TiO2(Nt). A modified BiFeO3/TiO2(Nt)/Ti (BFOT) structure with controllable electrical characteristics was obtained. BFOT possesses both ferroelectric and semiconductor properties with nonlinear conductivity dependent on the magnitude and duration of the voltage supply. Analysis of the temperature dependence of charge variation showed leakage currents in the BFOT structure due to the capture and release of charge carriers from defect levels. Surface modification of nanotubes with the multiferroic BiFeO3 allows for the creation of semiconductors with adaptive functional properties.

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Section: Structural Characteristicsmentioning

confidence: 99%

Surface Functionalization of TiO2 Nanotubes Modified with a Thin Film of BiFeO3

Ramazanov,

Orudzhev,

Gajiev

2023

Surfaces

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“…• thin foil (rolled sheet) [2-4, 7, 16-62] • amorphous foil (melt-spun) [7, • fine powders (with or without binding agent) [5,7,[15][16][17][85][86][87][88][89][90][91][92][93][94][95][96][97][98] • powder compact (made by sintering, cold isostatic pressing, etc.) [57,[99][100][101] • brazing paste [9,17,[102][103][104] • a physical vapor deposition process such as sputtering [7, 18-21, 62-64, 105] • electroplating [10, 17-19, 30, 88, 106-112] • evaporating an element out of the substrate material to create a ''glazed'' surface [113].…”

Section: Tlp Bonding Processmentioning

confidence: 99%

Overview of transient liquid phase and partial transient liquid phase bonding

2011

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Transient liquid phase (TLP) bonding is a relatively new bonding process that joins materials using an interlayer. On heating, the interlayer melts and the interlayer element (or a constituent of an alloy interlayer) diffuses into the substrate materials, causing isothermal solidification. The result of this process is a bond that has a higher melting point than the bonding temperature. This bonding process has found many applications, most notably the joining and repair of Ni-based superalloy components. This article reviews important aspects of TLP bonding, such as kinetics of the process, experimental details (bonding time, interlayer thickness and format, and optimal bonding temperature), and advantages and disadvantages of the process. A wide range of materials that TLP bonding has been applied to is also presented. Partial transient liquid phase (PTLP) bonding is a variant of TLP bonding that is typically used to join ceramics. PTLP bonding requires an interlayer composed of multiple layers; the most common bond setup consists of a thick refractory core sandwiched by thin, lower-melting layers on each side. This article explains how the experimental details and bonding kinetics of PTLP bonding differ from TLP bonding. Also, a range of materials that have been joined by PTLP bonding is presented.

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