The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes

Guo, Hongxuan; Gao, Ligang; Xia, Yidong; Jiang, Kang'an; Xu, Binduo; Liu, Z. G.; Yin, Jiang

doi:10.1063/1.3118574

Cited by 24 publications

(15 citation statements)

References 18 publications

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“…We assume that the vertical and lateral evolution of the CF are proportional to the ion current density. Namely, dh/dt ∝ J h (t) and dr/dt ∝ J r (t) following [5] and [12]. Moreover, to better explain some experimental evidences, we modify the expression of the Mott-Gurney ionic hopping current by introducing an empirical parameter Δ, which can be related to the overpotential that controls the kinetic of the cathodic reaction.…”

Section: Model Descriptionmentioning

confidence: 99%

Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

Palma

Vianello

Cagli

et al. 2012

2012 4th IEEE International Memory Workshop

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In this paper, we present a new empirical model able to explain the main features of set and reset processes in Ag-GeS2 Conductive Bridging Memories. The model is carefully validated on a wide number of experimental data, precisely designed for this scope. In particular, electrical tests were performed both in quasi static and in pulse modes on industrial CBRAM cells. The simulations here reported provide new insights on the device operations as well as clear indications for the development of CBRAM compact-modeling suitable for design implementation.

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Section: Model Descriptionmentioning

confidence: 99%

Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

Palma

Vianello

Cagli

et al. 2012

2012 4th IEEE International Memory Workshop

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“…1,2 The ECM cell consists of an insulator layer sandwiched between two electrodes, in which one is made from an electrochemically active electrode (AE) metal, such as Ag or Cu, and the other is a counter electrode (CE), such as Pt, Ir, W, or Ag. 3,4 Till now, a large number of ECM cells have been reported, employing various insulating materials such as chalcogenides, [5][6][7][8][9][10][11][12][13] oxides, [14][15][16][17][18][19][20][21][22][23][24] amorphous Si (Refs. 25 and 26) and C, [27][28][29][30] and organic materials.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge

et al. 2015

AIP Advances

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It has been reported that in chalcogenide-based electrochemical metallization (ECM) memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S), the metal filament grows from the cathode (e.g., Pt and W) towards the anode (e.g., Cu and Ag), whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2). The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

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“…The resistive switching phenomenon has been observed in various materials, such as perovskite oxides SrTiO 3 [3] , solid electrolytes [4] , and polymers [5] . However, these materials have their own notable disadvantages.…”

mentioning

confidence: 99%

“…With the recent development in the microelectronic industry, a new concept, the resistive random access memory (ReRAM), has attracted considerable attention in the field of storage technology [1,2] . This memory cell based on metal/insulator/metal (MIM) structure, in which resistance can be repeatedly switched between a high and a low value by applying an electric field, is a potential replacement of flash memory in next-generation non-volatile memory (NVM).The resistive switching phenomenon has been observed in various materials, such as perovskite oxides SrTiO 3[3] , solid electrolytes [4] , and polymers [5] . However, these materials have their own notable disadvantages.…”

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confidence: 99%

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Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Zhao¹,

Liu²,

Sun³

et al. 2012

中国光学快报

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Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0. With the recent development in the microelectronic industry, a new concept, the resistive random access memory (ReRAM), has attracted considerable attention in the field of storage technology [1,2] . This memory cell based on metal/insulator/metal (MIM) structure, in which resistance can be repeatedly switched between a high and a low value by applying an electric field, is a potential replacement of flash memory in next-generation non-volatile memory (NVM).The resistive switching phenomenon has been observed in various materials, such as perovskite oxides SrTiO 3[3] , solid electrolytes [4] , and polymers [5] . However, these materials have their own notable disadvantages. For example, a solid electrolyte needs high write operation voltage, polymer is limited by low endurance, etc. Transition metal oxides (TMOs), such as ZnO, ZrO 2 , NiO, TiO 2 , and Al 2 O [6−13] 3 , are extensively studied due to their simple constituent, excellent compatibility with complementary metal oxide semiconductor (CMOS) technology, and the capability for high scalability. The current-voltage (I-V ) characteristics of the TMOs exhibit a large change resistance between high resistance state (HRS) and low resistance state (LRS) for logic off-state and logic onstate.Compared with other devices, ZnO-based devices are promising candidates for binary oxide memory application, due to their low price, long retention time, and non-destructive readout. However, several reports have shown that the operation voltages are slightly higher and devices need a forming process in the initial state [7,14] . In this letter, ZnO-based memory devices with Ag electrode were fabricated by radio frequency (RF) magnetron sputtering, and the resistive switching properties were investigated. The devices showed the bipolar resistive switching behavior with operation voltage of less than 1 V and operating current of less than 25 mA, which are significantly lower than the results of Refs. [14,15]. The non-electroforming process was obtained in our devices, which is suitable for high-density ReRAM device application. Multi-step switching processes were also observed, which can be used for multi-level memory applications.In the fabrication of the ReRAM devices with Ag/ZnO/Pt structure, approximately 100-nm ZnO film was deposited on Pt/Ti/SiO 2 /Si substrates by RF magnetron sputtering at room temperature using a metallic Zn target. The device structure is shown in Fig. 1. A thin Ti layer was inserted between the layers of Pt and SiO 2 /Si to enhance the adhesion of Pt el...

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The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes

Cited by 24 publications

References 18 publications

Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

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