Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

Abstract

In this paper, we present a new empirical model able to explain the main features of set and reset processes in Ag-GeS2 Conductive Bridging Memories. The model is carefully validated on a wide number of experimental data, precisely designed for this scope. In particular, electrical tests were performed both in quasi static and in pulse modes on industrial CBRAM cells. The simulations here reported provide new insights on the device operations as well as clear indications for the development of CBRAM compact-modeling suitable for design implementation.

On disturb immunity and P/E kinetics of Sb-doped GeS<inf>2</inf>/Ag conductive bridge memories

“…At positive voltages, lower than 0.5V, the switching time drastically increases as the bias is reduced, this result is consistent with the stability of the OFF state at 0V [2,5] (see Fig.3). In other words, under a threshold voltage, no conductive filament can be formed.…”

“…Moreover, the time voltage dependence is very similar for undoped and Sb-doped samples ( Fig.6.a), showing the same immunity to the disturb phenomenon. This confirms that the switching dynamics at low positive voltages is governed by the oxidation and reduction reactions of silver at the electrodes, rather than the type of electrolyte [4], [5].…”

Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses

“…2a). This phenomenon of gradual resistance decrease can be explained with our model [21], assuming a gradual increase in the radius of the conductive filament formed during the set process. Larger gate voltages supply more metal ions leading to the formation of a larger conductive filament during the set process [22].…”

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

“…The R ON resistance depends strongly on the local diameter of the Cu conical nanobridge. In previous reports, a resistivity of 200 -cm to 2300  -cm has been experimentally extracted for different LRS levels [6], [7]. The high end of resistivity values may be attributed to the electron scattering by the nanobridge surface and the defects such as grain boundaries in the nanobridge.…”

“…In figure 1(b) a later stage of radial growth is shown, where the radius at the top of the cone approaches the magnitude of the bottom radius and, as a result, the local electric field no longer varies significantly from the top to the bottom. The transport of metal ions in the high electric field is quantitatively explained by the hopping mechanism [7][8][9][10]. We consider Cu + as the dominant cation.…”