On disturb immunity and P/E kinetics of Sb-doped GeS<inf>2</inf>/Ag conductive bridge memories

Abstract

This work investigates the resistance switching dynamics of GeS 2 -based CBRAM devices under a large range of voltage levels to address SET, RESET, disturb and retention regimes. We studied GeS 2 and Sb-doped GeS 2 1T-1R devices with Ag top electrode. We demonstrated that Sb doping improves SET speed to 30ns at 2.2V and 10 years disturb immunity at -0.3V without degrading RESET performances. We claim that the switching kinetics at low and high fields are governed by different physical mechanisms, allowing to improve independently the SET/RESET and disturb memory features.

Role of Sb dopant in Ag:GeSx‐based conducting bridge random access memories

“…For the present study, different samples, consisting in undoped and Sb‐doped Ag:GeS x chalcogenide thin films, were prepared by co‐sputtering on 200 mm Si wafers from GeS 2 and Sb pure targets. Details on the preparation are provided in previous publications . In all cases the chalcogenide layer had a thickness of 50 nm.…”

“…Also the switching behaviour profits from the addition of Sb as 10 at.%. Sb addition improves the SET speed of CBRAM devices (30 ns at 2.2 V SET voltage) and endurance with 10 11 readouts at −0.4 V .…”

Stochastic neuron design using conductive bridge RAM

“…The amplitude of S1 would determine the amount of current flowing through M1 (compliance current) and thus the final value of the CBRAM resistance in the set state. The set state resistance would determine the programming conditions for the consecutive reset-operation [27]. Thus, the characteristics of S2 can be tuned based on the final CBRAM resistance obtained after the set-operation.…”

Exploring the Compositional Ternary Diagram of Ge/S/Cu Glasses for Resistance Switching Memories

“…Chalcogenide glasses (CGs) are important materials used in a wide range of applications including electrodes for Li-ion battery, wave guide, optical data storage, and more recently solid electrolytes for emerging resistive memory. , Moreover, low-dimensional crystalline phases of mono- and dichalcogenides present great potential for high-performance optoelectronic , and piezoelectric devices . For example, Ge x X 100– x (X = S, Se) forms two-dimensional layered semiconductors for compositions corresponding to x = 50 and 33 with various electronic and optical properties, whereas nonstochiometric binary glasses present an ensemble of topological elastic and phase transitions for 10 < x < 44. , The introduction of Ag or Cu to GeX produces a mixed ionic-electronic ternary alloy with composition-dependent electronic and ionic conductivities − exhibiting either threshold or resistive switching − behavior under an external voltage. Resistance switching devices are foreseen as central components for next-generation electronics because of their low power consumption and ultrafast operation, and they have been demonstrated to be building blocks for neuromorphic computing. , Although there is bourgeoning interest in metal-doped CGs, the atomic mechanisms that govern the properties of these materials are not fully understood, and there still needs to be an effort to widen their integration into commercial applications.…”