In this work, for the first time at our k improvement of chalcogenide-based CBRAM and reliability by Sb doping of the GeS 2 presented. An original analysis, based on in-d chemical characterization, device electrical m empirical model and first principle calculations argue that optimized ~10% Sb doping in the G allows to achieve SET speed of 30ns at 2.2V (i programming power), while assuring 10 years at 125°C, >10 5 cycling and high robustness to S profile. Finally, the improved thermal stability in the GeS 2 -Sb matrix is clearly elucidated molecular dynamics calculations.

In this work, we present an experimental and theoretical analysis of scaled (down to 10nm) Al 2 O 3 /CuTeGe based CBRAM. We focus on the understanding of the physical mechanisms responsible for the failure of high and low resistance states at high temperature. Using a numerical model combined with ab-initio calculations, we elucidate for the 1 st time at our knowledge the role of the filament morphology on the resistance instability. We demonstrate that an optimized filament shape (tuned by adjusting the operating conditions) significantly improves the memory window stability at high temperatures.